43 results about "Nano grid" patented technology

The invention discloses a preparation method of nano grid octogen, which comprises the steps of adding a HMX / DMSO complex into pure water or a surfactant solution, stirring for certain time, filtering, washing and drying to obtain nano grid octogen powder with different micro structures. The method is used for quickly preparing nano grid octogen based on the HMX / DMSO complex, and can realize preparation from gram level to kilogram level; expensive large equipment is not required; the method is performed under room temperature conditions, and reaction conditions are mild; the preparation cost is low.

The invention provides a novel ZnO nano material and a preparation method thereof. The novel ZnO nano material comprises a substrate layer, nano walls and a nano-grid, wherein the nano wall is arranged on the substrate layer and is formed by stacking ZnO nanowires, and the nano-grid is composed of the nano-walls. The method specifically comprises the following steps that 1) a precursor mixed solution is prepared by using zinc acetate, a pore-forming agent and a dopant; 2) a precursor film is prepared by utilizing the precursor mixed solution; and 3) high-temperature sintering is carried out soas to obtain the ZnO nano-material. According to the novel ZnO nano material and the preparation method thereof, preparation equipment is mature, the process is simple, and large-scale production isfacilitated; the sintering temperature is accurately controlled, zinc acetate and the pore-forming agent are decomposed into water and carbon dioxide and the water and carbon dioxide are separated from microspheres so as to help to form pore channels and nanowires; a precursor can be completely decomposed at the temperature of 500 DEG C, crystallization of the ZnO nanowires is promoted, so that the novel ZnO nano material with good crystallization state is obtained, the size of the prepared microspheres is controllable, and the pore channels are uniformly distributed; and the ZnO nano materialprepared through the preparation method provided by the invention is wide in application range.

The invention discloses a method for manufacturing transistor T-shaped nanometer gate, comprising the steps of: A, coating a first layer electric beam glue which is liable to realize glue-stripping and peeling on a cleaned epitaxial wafer, and then soft-baking; B, coating a second layer electric beam glue ZEP520A on the first layer electric beam glue, and then soft-baking; C, coating a third layer electric beam glue which is liable to realize glue-stripping and peeling on the second layer electric beam glue ZEP520A, and then soft-baking; D, coating a fourth layer electric beam glue UVIII on the third layer electric beam glue, and then soft-baking; E, carrying out gate cap electric beam exposure, and sequentially developing the four layer electric beam glue UVIII, the third layer electric beam glue which is liable to realize glue-stripping and peeling; F, carrying out the gate feet electric beam exposure, and sequentially developing the second layer electric beam glue ZEP520A and the first layer electric beam glue which is liable to realize glue-stripping and peeling; G, eroding the gate groove, evaporating and peeling off gate metals to form the transistor T-shaped nanometer gate. Usage of the invention can easily manufacture the gate lines having small size, greatly reducing the process difficulty.

The invention discloses a method for preparing a transparent conductive nanowire mesh film on the surface of a three-dimensional microstructure. The method comprises the steps of making a rigid substrate with a three-dimensional microstructure on the upper surface, making a matched flexible pressing plate with the rigid substrate as a template by using an imprint method, coating the three-dimensional microstructure of the rigid substrate with a conductive nanowire mixed solution and pressing down with the flexible pressing plate to maintain a certain gap between the flexible pressing plate andthe rigid substrate, and drying the conductive nanowire mixed solution in the gap to obtain the nanowire mesh film attached to the surface of the three-dimensional microstructure of the rigid substrate. Conductive nanowires overlapping each other in a mesh achieve the circuit conduction, transparent mesh openings between the nanowires achieve transparency, and the preparation of the transparent conductive nanowire mesh film on the surface of the three-dimensional microstructure is achieved. Micro steps are formed by using a method of etching after oxidation before coating the rigid substratewith the conductive nanowire mixed solution, and the size of the gap can be controlled by the cooperation of the micro steps and the flexible pressing plate. The transparent conductive nanowire mesh film has the advantages of high quality, high preparation efficiency and low cost.

The invention discloses a method for manufacturing transistor T-shaped nanometer gate, comprising the steps of: A, coating a first layer electric beam glue which is liable to realize glue-stripping and peeling on a cleaned epitaxial wafer, and then soft-baking; B, coating a second layer electric beam glue ZEP520A on the first layer electric beam glue, and then soft-baking; C, coating a third layer electric beam glue which is liable to realize glue-stripping and peeling on the second layer electric beam glue ZEP520A, and then soft-baking; D, coating a fourth layer electric beam glue ZEP520A on the third layer electric beam glue, and then soft-baking; E, carrying out gate feet electric beam exposure; F, carrying out gate cap electric beam exposure; G, sequentially developing the four layer electric beam glue ZEP520A, the third layer electric beam glue, the second layer electric beam glue ZEP520A and the first layer electric beam glue; H, eroding the gate groove, evaporating and peeling off gate metals to form the transistor T-shaped nanometer gate. Usage of the invention can easily manufacture the gate lines having extremely small size, and the invention has high alignment precision and strong reliability without growth and etching mediums, thus largely reducing the process difficulty.

The invention discloses a HEMT device nanometer grid electrode preparation method; in the HEMT device making process, an Ag nano wire is employed as a mask to make source drain electrode metal depositions; the method also comprises the steps of: using an NH3.H2O, H2O2, and H2O mixture solution ultrasonic cleaning method to remove Ag nano wire; forming a slit between the source electrode and drainelectrode, wherein the slit and the Ag nano wire are equivalent in dimensions; finally, making a nanometer grid electrode in the slit. The formed HEMT device has a low grid source conduction resistance, a high power density and frequency response, is simple in process, low in cost, and can provide important meanings for realizing a high performance nitride-based device.