The invention discloses a method for manufacturing transistor T-shaped nanometer gate, comprising the steps of: A, coating a first layer electric beam glue which is liable to realize glue-stripping and peeling on a cleaned epitaxial wafer, and then soft-baking; B, coating a second layer electric beam glue ZEP520A on the first layer electric beam glue, and then soft-baking; C, coating a third layer electric beam glue which is liable to realize glue-stripping and peeling on the second layer electric beam glue ZEP520A, and then soft-baking; D, coating a fourth layer electric beam glue ZEP520A on the third layer electric beam glue, and then soft-baking; E, carrying out gate feet electric beam exposure; F, carrying out gate cap electric beam exposure; G, sequentially developing the four layer electric beam glue ZEP520A, the third layer electric beam glue, the second layer electric beam glue ZEP520A and the first layer electric beam glue; H, eroding the gate groove, evaporating and peeling off gate metals to form the transistor T-shaped nanometer gate. Usage of the invention can easily manufacture the gate lines having extremely small size, and the invention has high alignment precision and strong reliability without growth and etching mediums, thus largely reducing the process difficulty.