Method for producing transistor T type nano grid using once electron beam exposure

A technology of electron beam exposure and transistors, applied in the direction of optomechanical equipment, optics, circuits, etc., can solve the problems of difficult removal of electron beam glue, influence on device characteristics, poor adhesion, etc., achieve easy control of development time, increase the The effect of accurate error and strong reliability

Inactive Publication Date: 2008-10-01
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There must be a certain overlay error between the two electron beam exposures of the grid foot plate and the grid cap plate. For the production of nano-sized T-shaped grids, the overlay accuracy is extremely high, and the process is difficult to realize.
[0009] In addition, due to the poor adhesion between ZEP520A and the epitaxial wafer, a layer of dielectric needs to be deposited before coating.

Method used

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  • Method for producing transistor T type nano grid using once electron beam exposure
  • Method for producing transistor T type nano grid using once electron beam exposure
  • Method for producing transistor T type nano grid using once electron beam exposure

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Embodiment

[0069] The method for preparing T-type nano-gates of high electron mobility transistors (HEMT) in this example is to address some shortcomings in the preparation of T-type nano-gates of high electron mobility transistors (HEMTs), using four layers of PMGI / ZEP520A / PMGI / ZEP520A Electron beam photoresist structure (as shown in Table 1) and one-time electron beam exposure method to prepare high electron mobility transistor (HEMT) T-type nano-gate.

[0070] Table 1 is a structural representation of the PMGI / ZEP520A / PMGI / ZEP520A four-layer electron beam photoresist used in the method for preparing a high electron mobility transistor (HEMT) T-type nano-gate of the present invention:

[0071]

[0072] Table 1

[0073] In this embodiment, the first layer of electron beam glue and the third layer of electron beam glue that are easy to realize deglue and stripping are PMGI electron beam glue, which is used in the preparation method of high electron mobility transistor (HEMT) T-type na...

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Abstract

The invention discloses a method for using once electric beam exposure to manufacture transistor T-shaped nanometer gate, comprising the steps of: A, coating a first layer electric beam glue which is liable to realize glue-stripping and peeling on a cleaned epitaxial wafer, and then soft-baking; B, coating a second layer electric beam glue ZEP520A on the first layer electric beam glue, and then soft-baking; C, coating a third layer electric beam glue which is liable to realize glue-stripping and peeling on the second layer electric beam glue ZEP520A, and then soft-baking; D, coating a fourth layer electric beam glue ZEP520A on the third layer electric beam glue, and then soft-baking; E, carrying out gate electric beam exposure; F, sequentially developing the four layer electric beam glue ZEP520A, the third layer electric beam glue which is liable to realize glue-stripping and peeling, the second layer electric beam glue ZEP520A and the first layer electric beam glue which is liable to realize glue-stripping and peeling; G, eroding the gate groove, evaporating and peeling off gate metals to form the transistor T-shaped nanometer gate. The invention has strong reliability, simple processes and is easy to peel off and strip the glue.

Description

technical field [0001] The invention relates to the technical field of compound semiconductors, in particular to a method for preparing a T-shaped nano-gate of a high electron mobility transistor by using an electron beam exposure technique. Background technique [0002] Gate preparation is the most critical process in the manufacturing process of High Electron Mobility Transistor (HEMT) devices. Since the gate length directly determines the frequency, noise and other characteristics of the HEMT device, the smaller the gate length, the current cutoff frequency of the device (f T ) and power gain cutoff frequency (f max ) The higher the noise figure of the device is, the smaller the noise figure of the device is. People can obtain devices with better characteristics by continuously reducing the gate length of high electron mobility transistor (HEMT) devices. [0003] As the gate length shortens, the gate resistance increases, and when the gate length decreases below 0.5 μm,...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/335G03F7/00
Inventor 刘亮张海英刘训春
Owner SEMICON MFG INT (SHANGHAI) CORP
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