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An ultraviolet photoelectric detector based on a ZnO nano-grid and a preparation method thereof

A nano-grid and electrical detector technology, applied in the field of photoelectric detectors, can solve the problems of harsh conditions, lower production costs, and high equipment requirements, and achieve the effects of simple manufacturing equipment, convenient large-scale production, and reduced production costs

Active Publication Date: 2018-12-28
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of these manufacturing process conditions are harsh and require high equipment, which is not conducive to the reduction of production costs.

Method used

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  • An ultraviolet photoelectric detector based on a ZnO nano-grid and a preparation method thereof
  • An ultraviolet photoelectric detector based on a ZnO nano-grid and a preparation method thereof
  • An ultraviolet photoelectric detector based on a ZnO nano-grid and a preparation method thereof

Examples

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Embodiment 1

[0033] A method for preparing an ultraviolet photodetector based on ZnO nanogrids, comprising the following steps:

[0034] (1) Preparation of mixed solution: Zinc acetate and ethanol are prepared in a ratio of 0.08g:20mL to prepare a mixed solution, and a magnetic stirrer is used to stir for 30min to obtain a mixed solution A of zinc acetate and ethanol. Then, zinc acetate, zinc carbonate , ethanol is configured mixed solution by the ratio of 0.08g:0.035g:20mL; And use magnetic stirrer to stir 30min, obtain the mixed solution B of zinc acetate, zinc carbonate, ethanol;

[0035] (2) Preparation of thin film C: use one of glass, quartz, silicon wafer, sapphire, and metal plate as the substrate. The substrate size is 2cm×2cm. Use a spin coater to evenly coat a layer of zinc acetate on the substrate , ethanol mixed film, the specific spin-coating process is as follows: first, use a dropper to drop 4 drops of mixed solution A on the substrate, and then use a spin coater to rotate ...

Embodiment 2

[0043] A method for preparing an ultraviolet photodetector based on ZnO nanogrids, comprising the following steps:

[0044] (1) Preparation of a mixed solution: prepare a mixed solution of zinc acetate and ethanol at a ratio of 0.1g:30mL, and stir for 60min using a magnetic stirrer to obtain a mixed solution A of zinc acetate and ethanol, then, zinc acetate, zinc carbonate , ethanol is configured mixed solution by the ratio of 0.1g:0.035g:30mL; And use magnetic stirrer to stir 60min, obtain the mixed solution B of zinc acetate, zinc carbonate, ethanol;

[0045] (2) Preparation of thin film C: use one of glass, quartz, silicon wafer, sapphire, and metal plate as the substrate. The substrate size is 5cm×5cm. Use a spin coater to evenly coat a layer of zinc acetate on the substrate , ethanol mixed film, the specific spin-coating process is as follows: first, use a dropper to drop 10 drops of mixed solution A on the substrate, and then use a spin coater to rotate the substrate at ...

Embodiment 3

[0054] A method for preparing an ultraviolet photodetector based on ZnO nanogrids, comprising the following steps:

[0055] (1) Preparation of mixed solution: Zinc acetate and ethanol are prepared in the ratio of 0.15g:30mL mixed solution, and use magnetic stirrer to stir for 60min, obtain the mixed solution A of zinc acetate and ethanol, then, zinc acetate, zinc carbonate , ethanol is configured mixed solution by the ratio of 0.15g:0.035g:30mL; And use magnetic stirrer to stir 60min, obtain the mixed solution B of zinc acetate, zinc carbonate, ethanol;

[0056] (2) Preparation of thin film C: use one of glass, quartz, silicon wafer, sapphire, and metal plate as the substrate, the substrate size is 8cm×8cm, and evenly coat a layer of zinc acetate on the substrate using a spin coater , ethanol mixed film, the specific spin-coating process is as follows: first, use a dropper to drop 10 drops of mixed solution A on the substrate, and then use a spin coater to rotate the substrate...

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Abstract

The invention relates to an ultraviolet photoelectric detector based on ZnO nano-grid and a preparation method thereof. The ultraviolet photoelectric detector based on the ZnO nano-grid is prepared through the steps of preparing a mixed solution, a multilayer thin film, high-temperature sintering, metal nanometer particles, electrodes and the like. As the preparation method of the invention has wide application range, the preparation of the ultraviolet photoelectric detector based on the ZnO nano-grid can be realized on a plurality of large-size substrates, the production cost is reduced, themanufacturing equipment is simple, the process is mature, and the large-scale production is convenient. In addition, the photoelectric response performance of the ultraviolet photoelectric detector ofthe invention is excellent.

Description

technical field [0001] The invention relates to the field of photodetectors, in particular to a ZnO nanogrid-based ultraviolet photodetector and a preparation method thereof. Background technique [0002] With the rapid development of modern industry, greenhouse gases have caused serious damage to the ozone layer, the ozone layer has become thinner, and even some holes have appeared in the ozone layer. A thinning or hole in the ozone layer leads to an increase in the amount of ultraviolet light hitting the Earth's surface. Excessive ultraviolet rays are extremely harmful to life on earth. Especially for humans, excessive ultraviolet doses can easily burn the skin and even induce serious diseases such as skin cancer. Therefore, it is very important to strengthen the monitoring of outdoor ultraviolet rays. ZnO is a kind of non-toxic, excellent biocompatibility, abundant raw material II-VI wide bandgap semiconductor material, and also an emerging ultraviolet optoelectronic m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/0352H01L31/09H01L31/18B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/0296H01L31/035209H01L31/09H01L31/1836Y02P70/50
Inventor 杨为家沈耿哲何鑫梁萍刘俊杰刘铭全刘艳怡王诺媛陈毅湛
Owner WUYI UNIV
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