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Photo-anode material and preparation method thereof

A photoanode and composite material technology, applied in the field of electrochemical applications, can solve the problem that the photoelectric response performance of photoanode materials needs to be further improved, and achieve the effect of excellent photoelectric response performance and photoelectric response improvement

Pending Publication Date: 2021-11-26
HAINAN UNICAN SCI & TECH INNOVATION INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the photoelectric response performance of existing photoanode materials still needs to be further improved.

Method used

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  • Photo-anode material and preparation method thereof
  • Photo-anode material and preparation method thereof
  • Photo-anode material and preparation method thereof

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preparation example Construction

[0022] The application provides a method for preparing a photoanode material, comprising the following steps:

[0023] S1. React the molybdenum source and the selenium source in water under the action of a reducing agent to obtain a molybdenum diselenide precursor solution; put the titanium dioxide into a tubular furnace with an ammonia atmosphere for gradient temperature annealing to produce titanium nitride ;

[0024] S2. Put the titanium nitride into the polytetrafluoroethylene lining, add the molybdenum diselenide precursor solution, and react hydrothermally at a temperature of 170-180°C to obtain MoSe 2 @TiN composites;

[0025] S3, the MoSe 2 The @TiN composite material is annealed at 400-500°C under an inert atmosphere to obtain MoSe 2 @TiN photoanode material.

[0026] Compared with traditional materials, the photoanode material prepared by the invention has significantly better photoelectric response performance, which is beneficial to the application in photocata...

Embodiment 1

[0038] (1) TiO 2Put it into a tube furnace with an ammonia atmosphere for gradient heating (the first stage: 1min, 10°C to 600°C; the second stage: 1min, 2°C to 800°C, hold for 2h) annealing treatment, the production into TiN.

[0039] (2) MoSe 2 Preparation of the precursor: Take 50mL of deionized water, 0.8g of ammonium molybdate tetrahydrate as the molybdenum source, 0.7g of Se powder as the Se source, and hydrazine hydrate as the reducing agent. Dissolve ammonium molybdate in water and stir for 10 minutes to obtain liquid A, then dissolve Se powder in hydrazine hydrate to obtain liquid B; mix liquid A and liquid B and stir for 30 minutes to obtain MoSe 2 precursor solution.

[0040] (3) Hydrothermal: put the obtained TiN into the polytetrafluoroethylene lining with the conductive side facing down, and add the above MoSe 2 Precursor solution, hydrothermal at 180°C for one hour to obtain MoSe 2 @TiN, take it out, wash it and vacuum dry it, set it aside.

[0041] (4) Th...

Embodiment 2

[0045] (1) TiO 2 Put it into a tube furnace with an ammonia atmosphere for gradient heating (the first stage: 1min, 10°C to 600°C; the second stage: 1min, 2°C to 800°C, hold for 2h) annealing treatment, the production into TiN.

[0046] (2) Mix the selenium powder solution and the sodium molybdate dihydrate solution, and stir for 30 minutes to obtain a precursor solution. Transfer this precursor solution to a polytetrafluoroethylene-lined autoclave. The selenium powder solution was prepared from 0.158g selenium powder and 5mL hydrazine hydrate; the dihydrate sodium molybdate solution was prepared from 0.242g dihydrate ammonium molybdate and 25mL deionized water.

[0047] (3) Hydrothermal: Put the obtained TiN into the above-mentioned high-pressure reaction kettle lined with polytetrafluoroethylene, with the conductive side facing down, and heat it at 180°C for one hour to obtain MoSe 2 @TiN, take it out, wash it and vacuum dry it, set it aside.

[0048] (4) The dried MoSe ...

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Abstract

The invention provides a photo-anode material and a preparation method thereof; the method comprises the steps: S1, enabling a molybdenum source and a selenium source to react in water under the action of a reducing agent, thereby obtaining a molybdenum diselenide precursor solution, and then putting the titanium dioxide into a tubular furnace with an ammonia gas atmosphere, and carrying out gradient heating annealing treatment to prepare titanium nitride; s2, placing the titanium nitride into a polytetrafluoroethylene lining, adding the molybdenum diselenide precursor solution and performing a hydrothermal reaction at the temperature of 170-180 DEG C to prepare a MoSe2@TiN composite material is obtained; s3, treating the MoSe2@TiN composite material in an inert atmosphere to be annealed at the temperature of 400 DEG C to 500 DEG C to make the MoSe2@TiN photo-anode material. Compared with the MoSe2@TiN photo-anode material, the photoelectric response of the MoSe2@TiN photo-anode material prepared by the method is obviously improved; meanwhile, the photo-anode material disclosed by the embodiment of the invention is excellent in photoelectric response performance.

Description

technical field [0001] The application belongs to the field of electrochemical application technology, and specifically relates to a photoanode material and a preparation method thereof. Background technique [0002] At present, with the rapid growth of the global population, the rapid development of industry, and the unprecedented continuous prosperity and development of the world economy, while improving and improving people's living standards, it has also brought us various problems. Among them, the speed of people's energy consumption increases exponentially, which leads to the shortage of energy, the greenhouse effect caused by greenhouse gases, and environmental problems such as acid rain and smog, which have become the focus of people's attention. [0003] Among them, the problem of water pollution is getting more and more attention. In addition to many traditional sewage treatment methods, photocatalytic technology provides a new idea in the direction of water treat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C02F1/30C02F1/461
CPCC02F1/30C02F1/46109C02F2001/46142
Inventor 林正玺黄东超
Owner HAINAN UNICAN SCI & TECH INNOVATION INST CO LTD
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