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Two-dimensional layered heterojunction Ge-GeH, photoelectric anode material and preparation method of two-dimensional layered heterojunction Ge-GeH

A two-dimensional layered, photoanode technology, applied in the field of photoelectric detection, can solve the problems of attenuation, structural degradation performance of two-dimensional layered heterojunction materials, and long time consumption.

Active Publication Date: 2021-09-14
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the poor conductivity of GeH nanosheets, its photoresponse rate under simulated sunlight irradiation is low, only 22μA / W, and the chemical preparation of the material takes a long time (more than 8 days)
[0003] Two-dimensional layered heterojunction materials are considered to be used in the preparation of PEC-type photodetectors, but the current method of preparing two-dimensional layered heterojunction materials is usually to peel off the two-dimensional materials into thin sheets, and then pass hydrothermal However, in the process of pre-stripping, storage and transfer, it will bring about the degradation of the two-dimensional layered heterojunction material structure and performance attenuation, which will lead to its use in the preparation of PEC-type photodetectors. When the device is used, the photoresponsivity is low

Method used

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  • Two-dimensional layered heterojunction Ge-GeH, photoelectric anode material and preparation method of two-dimensional layered heterojunction Ge-GeH
  • Two-dimensional layered heterojunction Ge-GeH, photoelectric anode material and preparation method of two-dimensional layered heterojunction Ge-GeH
  • Two-dimensional layered heterojunction Ge-GeH, photoelectric anode material and preparation method of two-dimensional layered heterojunction Ge-GeH

Examples

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Effect test

Embodiment 1

[0034] A method for preparing a two-dimensional layered heterojunction Ge-GeH, comprising the steps of:

[0035] S1. In an inert gas environment, mix the elemental germanium and the elemental calcium at a mass ratio of 1:0.5, put them into a quartz tube, seal the tube in vacuum, and put the sealed quartz tube into a muffle furnace for high-temperature calcination. The following temperature profile was used: (1) heating to 1000°C at a rate of 4°C / min; (2) annealing at 1000°C for 24 hours; (3) slow cooling to 500°C at a rate of 2°C / min; (4) Cool to room temperature at a rate of 3 °C / min, collect CaGe after calcination 2 crystal;

[0036] S2. CaGe to be collected 2 Transfer the crystals to a round bottom flask, add 30mL of concentrated hydrochloric acid, and then use a circulating water vacuum pump to evacuate the round bottom flask to a vacuum state, and stir and react at -30°C for 48h. After washing the suspension, multilayer Ge-GeH is obtained. Add ethanol to the multilayer...

Embodiment 2

[0039] Different from Example 1, the ratio of germanium to calcium in this example is 1:0.4. The total time consumed for the preparation of the two-dimensional layered heterojunction Ge-GeH described in this example is basically the same as that in Example 1.

Embodiment 3

[0041] Different from Example 1, the ratio of germanium to calcium in this example is 1:0.6. The total time consumed for the preparation of the two-dimensional layered heterojunction Ge-GeH described in this example is basically the same as that in Example 1.

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Abstract

The invention discloses a two-dimensional layered heterojunction Ge-GeH, a photoelectric anode material and a preparation method of the two-dimensional layered heterojunction Ge-GeH. The preparation method of the Ge-GeH heterojunction comprises the following steps that: S1, a germanium elementary substance and a calcium elementary substance are uniformly mixed in proportion, calcining is performed, and cooling is performed to obtain a mixture, the mass ratio of the germanium elementary substance to the calcium elementary substance is 1: (0.4-0.8); and S2, the mixture obtained in the step S1 is mixed with concentrated hydrochloric acid, a stirring reaction is carried out under a vacuum condition for 40-55 h, and washing and ultrasonic treatment are carried out to obtain the two-dimensional layered heterojunction Ge-GeH. The prepared two-dimensional layered heterojunction Ge-GeH has excellent photoelectric response performance and can be mixed with commercial conductive carbon powder to be used for preparing a photoelectric anode material in a PEC type photoelectric detection system.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, and more specifically, to a two-dimensional layered heterojunction Ge-GeH, a photoanode material and a preparation method thereof. Background technique [0002] As a member of the family of graphene analogues, germanium has shown great potential in electronic and optical device applications due to its unique structural and electronic properties, while GeH not only maintains the high carrier mobility similar to germanium rate, and also exhibit strong light-matter interactions with direct bandgap, showing great potential in optoelectronic applications. Due to the poor conductivity of GeH nanosheets, its photoresponse rate under simulated sunlight irradiation is low, only 22μA / W, and the chemical preparation of the material takes a long time (more than 8 days). [0003] Two-dimensional layered heterojunction materials are considered to be used in the preparation of PEC-type photodet...

Claims

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Application Information

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IPC IPC(8): H01G9/20C01B6/06
CPCH01G9/2045C01B6/06C01P2002/72C01P2004/03C01P2004/04C01P2006/40Y02P20/133Y02E10/542
Inventor 罗劭娟吴梓环招家富王林杰邱全源李泽宇陆凤连冯斯桐欧金法吴传德
Owner GUANGDONG UNIV OF TECH
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