cu2znsns4 sensitized tio2 photoanode and its in situ preparation method and application

An in-situ preparation and photoanode technology, which is applied in the direction of photosensitive equipment, can solve the problems of high cost and inability to improve the separation efficiency of photogenerated electrons and holes, and achieve low production cost, avoid the formation of single metal sulfide, and easy size The effect of control

Inactive Publication Date: 2018-06-29
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Cu obtained by this method 2 ZnSnS 4 The semiconductor thin film is Cu 2 ZnSnS 4 The film is directly loaded on the conductive substrate without forming a heterojunction, which cannot improve the separation efficiency of photogenerated electrons and holes. Therefore, in this invention, the semiconductor film is only used as a counter electrode in a fuel-sensitized solar cell rather than a light-absorbing photoanode.
In addition, in the invention Cu 2 ZnSnS 4 The film is a flower-like or spherical shape assembled by nanosheets, not quantum dot nanocrystals, and it is pure. This method uses ethanol as a solvent, and the cost is high

Method used

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  • cu2znsns4 sensitized tio2 photoanode and its in situ preparation method and application
  • cu2znsns4 sensitized tio2 photoanode and its in situ preparation method and application
  • cu2znsns4 sensitized tio2 photoanode and its in situ preparation method and application

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preparation example Construction

[0038] Cu 2 ZnSnS 4 Sensitized TiO 2 The in situ preparation method of the photoanode adopts the following steps:

[0039] (1) Weigh the raw materials, express the amount of the substance in millimoles, and add the copper salt, zinc salt, tin salt, reducing agent and modifier together with the sulfur source in a millimolar ratio of 2:1:1.2:x:y into a polytetrafluoroethylene reactor, then add water to dissolve, and form a precursor solution with a concentration of 0.01-0.5M, where x is the amount of reducing agent, x=1-15, and y is the amount of modifier, y=1-35; the amount of sulfur source is 1-20 times of the sum of copper salt, zinc salt and tin salt;

[0040] (2) Add the prepared titanium dioxide nanostructure photoanode material in the configured precursor solution;

[0041] (3) Seal the reactor, control the reaction temperature inside the reactor to be 100-200° C., and react for 1-24 hours. After the reaction, cool the reactor to room temperature naturally, take out t...

Embodiment 1

[0052] (1) represent the amount of substance in millimoles, join copper acetate, zinc acetate and thioacetamide together in the 50mL polytetrafluoroethylene reactor with the millimolar ratio of 0.8:0.4:15.2 respectively, then add 40mL water, Stir and ultrasonically dissolve, then add 3 mL of mercaptopropionic acid and 2 mL of triethanolamine to adjust the pH to 10-11, wherein triethanolamine is the reducing agent and mercaptopropionic acid is the modifier. Finally, add 12mL tin tetrachloride solution having a concentration of 0.04M (mol / liter), and stir evenly.

[0053] (2) Put the prepared titanium dioxide nanostructured photoanode substrate into the prepared precursor solution.

[0054] (3) The reaction kettle is sealed, and the reaction temperature is controlled to be 200° C., and the reaction time is 12 hours; after the reaction is completed, the reaction kettle is naturally cooled to room temperature, and the synthesized photoanode material is washed several times with ab...

Embodiment 2

[0057] The steps are the same as in Example 1, except that the reducing agent triethanolamine in Example 1 is replaced by ascorbic acid to obtain Cu 2 ZnSnS 4 Sensitized solar cell photoanode materials.

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Abstract

The invention relates to a Cu2ZnSnS4 sensitized TiO2 photoanode and its in-situ preparation method and application, comprising a TiO2 layer loaded on a transparent conductive substrate and a pure-phase Cu2ZnSnS4 nanocrystal attached to the TiO2 layer, and copper salt, zinc salt, tin salt , reducing agent, modifying agent and sulfur source are added to the polytetrafluoroethylene reactor, water is added to dissolve, and then a transparent conductive substrate with a TiO2 layer is added, the temperature is controlled at 100-200°C, and the in-situ growth reaction is 1-24h , taken out, washed and dried, and the Cu2ZnSnS4 sensitized TiO2 photoanode is prepared. Compared with the prior art, the present invention has simple operation steps, rapid reaction and low cost, and the prepared Cu2ZnSnS4 sensitized titanium dioxide photoanode material has a sensitive photoelectric response and can be widely used in the fields of photoelectric sensors, photoelectrocatalysis, solar cells and the like.

Description

technical field [0001] The invention relates to the field of solar cell material manufacturing, in particular to a Cu 2 ZnSnS 4 Sensitized TiO 2 Photoanode and its in situ preparation method and application. Background technique [0002] As one of the clean energy sources discovered and utilized by human beings, solar energy provides huge energy to the earth, which is about 10,000 times the annual energy consumption of human beings today. If human beings can use solar energy as the main energy source, not only the energy crisis faced by human beings can be solved, but also secondary problems such as the ecological environment accompanied by traditional energy consumption can be eliminated. Since the development of silicon solar cells in 1954, solar cell technology has developed rapidly. Due to the aggravation of the energy crisis, people's dependence on renewable energy is getting stronger and stronger, which promotes the rapid development of clean energy utilization tec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/042H01G9/20
Inventor 田原钱天悦肖竹君李后兴王焱黄守双宰建陶钱雪峰
Owner SHANGHAI JIAO TONG UNIV
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