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A two-dimensional layered heterojunction ge-geh, photoanode material and preparation method thereof

A two-dimensional layered and photoanode technology, which is applied in the field of photoelectric detection, can solve the problems of structural degradation, time-consuming, and attenuation of two-dimensional layered heterojunction materials, and achieve excellent photoelectric response performance and short time-consuming effects.

Active Publication Date: 2022-04-22
GUANGDONG UNIV OF TECH
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  • Claims
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AI Technical Summary

Problems solved by technology

Due to the poor conductivity of GeH nanosheets, its photoresponse rate under simulated sunlight irradiation is low, only 22μA / W, and the chemical preparation of the material takes a long time (more than 8 days)
[0003] Two-dimensional layered heterojunction materials are considered to be used in the preparation of PEC-type photodetectors, but the current method of preparing two-dimensional layered heterojunction materials is usually to peel off the two-dimensional materials into thin sheets, and then pass hydrothermal However, in the process of pre-stripping, storage and transfer, it will bring about the degradation of the two-dimensional layered heterojunction material structure and performance attenuation, which will lead to its use in the preparation of PEC-type photodetectors. When the device is used, the photoresponsivity is low

Method used

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  • A two-dimensional layered heterojunction ge-geh, photoanode material and preparation method thereof
  • A two-dimensional layered heterojunction ge-geh, photoanode material and preparation method thereof
  • A two-dimensional layered heterojunction ge-geh, photoanode material and preparation method thereof

Examples

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Effect test

Embodiment 1

[0034] A method for preparing a two-dimensional layered heterojunction Ge-GeH, comprising the steps of:

[0035] S1. In an inert gas environment, mix the elemental germanium and the elemental calcium at a mass ratio of 1:0.5, put them into a quartz tube, seal the tube in vacuum, and put the sealed quartz tube into a muffle furnace for high-temperature calcination. The following temperature profile was used: (1) heating to 1000°C at a rate of 4°C / min; (2) annealing at 1000°C for 24 hours; (3) slow cooling to 500°C at a rate of 2°C / min; (4) Cool to room temperature at a rate of 3 °C / min, collect CaGe after calcination 2 crystal;

[0036] S2. CaGe to be collected 2 Transfer the crystals to a round bottom flask, add 30mL of concentrated hydrochloric acid, and then use a circulating water vacuum pump to evacuate the round bottom flask to a vacuum state, and stir and react at -30°C for 48h. After washing the suspension, multilayer Ge-GeH is obtained. Add ethanol to the multilayer...

Embodiment 2

[0039] Different from Example 1, the ratio of germanium to calcium in this example is 1:0.4. The total time consumed for the preparation of the two-dimensional layered heterojunction Ge-GeH described in this example is basically the same as that in Example 1.

Embodiment 3

[0041] Different from Example 1, the ratio of germanium to calcium in this example is 1:0.6. The total time consumed for the preparation of the two-dimensional layered heterojunction Ge-GeH described in this example is basically the same as that in Example 1.

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Abstract

The invention discloses a two-dimensional layered heterojunction Ge-GeH, a photoelectric anode material and a preparation method thereof. The preparation method of the Ge-GeH heterojunction includes the following steps: S1. Mixing germanium and calcium in proportion After calcination, the mixture is obtained after cooling; the mass ratio of germanium to calcium is 1: (0.4-0.8); S2. Mix the mixture obtained in S1 with concentrated hydrochloric acid, stir and react under vacuum for 40-55h, wash, and ultrasonically treatment, the resulting two-dimensional layered heterojunction Ge‑GeH. The two-dimensional layered heterojunction Ge-GeH prepared by the present invention has excellent photoelectric response performance, and can be mixed with commercial conductive carbon powder to prepare photoanode materials in PEC-type photodetection systems.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, and more specifically, to a two-dimensional layered heterojunction Ge-GeH, a photoanode material and a preparation method thereof. Background technique [0002] As a member of the family of graphene analogues, germanium has shown great potential in electronic and optical device applications due to its unique structural and electronic properties, while GeH not only maintains the high carrier mobility similar to germanium rate, and also exhibit strong light-matter interactions with direct bandgap, showing great potential in optoelectronic applications. Due to the poor conductivity of GeH nanosheets, its photoresponse rate under simulated sunlight irradiation is low, only 22μA / W, and the chemical preparation of the material takes a long time (more than 8 days). [0003] Two-dimensional layered heterojunction materials are considered to be used in the preparation of PEC-type photodet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20C01B6/06
CPCH01G9/2045C01B6/06C01P2002/72C01P2004/03C01P2004/04C01P2006/40Y02P20/133Y02E10/542
Inventor 罗劭娟吴梓环招家富王林杰邱全源李泽宇陆凤连冯斯桐欧金法吴传德
Owner GUANGDONG UNIV OF TECH
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