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A kind of zno nanometer material, and preparation method thereof

A technology of nanomaterials and nanowires, which is applied in the field of ZnO nanomaterials and its preparation, can solve the problems of insignificant advantages of electrode materials, excessive macroscopic size, complex preparation process, etc., and achieve mature preparation equipment, simple process, and convenient scale The effect of chemical production

Active Publication Date: 2020-05-12
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Zhang et al. (Ind.Eng.Chem.Res., 50, 13355, 2011) used a microporous membrane separation device to prepare ZnO microspheres with a size of about 10 μm self-assembled from sheet-layer nano-ZnO particles. There are also many level structure, but its macroscopic size is too large and the preparation process is complicated, so the advantages of being used as photoelectric conversion electrode materials are not obvious

Method used

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  • A kind of zno nanometer material, and preparation method thereof
  • A kind of zno nanometer material, and preparation method thereof
  • A kind of zno nanometer material, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A preparation method of ZnO nanometer material, comprising the following steps:

[0031] 1), the preparation of the precursor mixed solution, the pore-forming agent polyethylene oxide-polypropylene oxide-polyethylene oxide triblock copolymer and zinc acetate were added to 10mL according to the mass ratio of 0.5:100 In ethylene glycol, magnetically stirred at 60°C for 60min to obtain a clear precursor mixed solution;

[0032] 2) For the preparation of the precursor thin film, place the substrate on a spin coater, first drop 2 drops of the precursor mixed solution on the center of the substrate, and then rotate at 500 rpm for 30s to spread the mixed solution on the substrate ;

[0033] 3), then, rotate at 1500 rpm for 100s;

[0034] 4), then, rotate at 3000 rpm for 120s to obtain a uniformly distributed precursor film;

[0035] 5), high temperature sintering, transfer the precursor film prepared in step 4) to a box-type annealing furnace, start from room temperature, r...

Embodiment 2

[0039] A preparation method of ZnO nanometer material, comprising the following steps:

[0040] 1), the preparation of the precursor mixed solution, the pore-forming agent polyethylene oxide-polypropylene oxide-polyethylene oxide triblock copolymer and zinc acetate were added to 25mL according to the mass ratio of 0.5:100 In ethylene glycol, magnetically stirred at 80°C for 80min to obtain a clear precursor mixed solution;

[0041] 2) For the preparation of the precursor thin film, place the substrate on a spin coater, first drop 4 drops of the precursor mixed solution in the center of the substrate, and then rotate at 500 rpm for 50s to spread the mixed solution on the substrate ;

[0042] 3), then, rotate at 2000 rpm for 30s;

[0043] 4), then, rotate at 4000 rpm for 60s to obtain a uniformly distributed precursor film;

[0044] 5), high temperature sintering, transfer the precursor film prepared in step 4) to a box-type annealing furnace, start from room temperature, rai...

Embodiment 3

[0047] Application of ZnO Nanomaterials in Photodetectors

[0048] On the ZnO nanomaterial prepared in Example 1, continue to epitaxially grow the Au electrode, thereby preparing a photodetector, specifically: use a mask plate and an electron beam to evaporate the metal Au electrode, and form an ohmic contact and a Schottky junction after annealing, The photodetector consists of ZnO nanomaterials and metal Au electrodes, and its structure is as Figure 4 As shown, the dark current of the prepared ZnO nanomaterial photodetector is only 30.2pA under 1V bias, and the maximum value of the device reaches 0.874A / W under 1V bias.

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Abstract

The invention provides a novel ZnO nano material and a preparation method thereof. The novel ZnO nano material comprises a substrate layer, nano walls and a nano-grid, wherein the nano wall is arranged on the substrate layer and is formed by stacking ZnO nanowires, and the nano-grid is composed of the nano-walls. The method specifically comprises the following steps that 1) a precursor mixed solution is prepared by using zinc acetate, a pore-forming agent and a dopant; 2) a precursor film is prepared by utilizing the precursor mixed solution; and 3) high-temperature sintering is carried out soas to obtain the ZnO nano-material. According to the novel ZnO nano material and the preparation method thereof, preparation equipment is mature, the process is simple, and large-scale production isfacilitated; the sintering temperature is accurately controlled, zinc acetate and the pore-forming agent are decomposed into water and carbon dioxide and the water and carbon dioxide are separated from microspheres so as to help to form pore channels and nanowires; a precursor can be completely decomposed at the temperature of 500 DEG C, crystallization of the ZnO nanowires is promoted, so that the novel ZnO nano material with good crystallization state is obtained, the size of the prepared microspheres is controllable, and the pore channels are uniformly distributed; and the ZnO nano materialprepared through the preparation method provided by the invention is wide in application range.

Description

technical field [0001] The invention relates to the technical field of ZnO nanometer materials, in particular to a ZnO nanometer material and a preparation method thereof. Background technique [0002] Zinc oxide (ZnO) is a typical third-generation semiconductor material. Since the ZnO crystal has a bandgap width as high as 3.37eV at room temperature and an exciton binding energy as high as 60meV, it has strong free exciton transition luminescence in the ultraviolet band, and has chemical stability, near-ultraviolet emission, and biological non-toxicity. It has unique advantages and potential application prospects in the fields of photocatalysis, photoelectricity, photovoltaics and sensors. [0003] A very important research direction of ZnO materials is ZnO nanomaterials, such as ZnO nanodots, ZnO nanospheres, ZnO nanocolumns, ZnO nanoflowers and so on. ZnO nanomaterials have outstanding advantages such as large specific surface area, quantum effect, local surface confine...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02B82Y30/00B82Y40/00B01J23/06G01N21/85
CPCB01J23/06B01J35/004B82Y30/00B82Y40/00C01G9/02C01P2002/72C01P2004/03C01P2004/62G01N21/85G01N2021/8578
Inventor 杨为家何鑫刘俊杰刘铭全刘艳怡王诺媛刘均炎沈耿哲张弛赵丽特
Owner WUYI UNIV
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