Nano hole detection system based on micro/nano hole net integrated structure and preparation method of nano hole detection system
A technology of micro-nanopore and detection system, which is applied in the direction of biochemical equipment and methods, measuring devices, enzymology/microbiology devices, etc., can solve the problems of low yield and blocked nanopores, so as to improve reliability and reduce The effect of the entropy barrier
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Embodiment 1
[0053] see Figure 1-3 , figure 1 A schematic diagram showing the structure of the nanopore detection system based on the micro-nano pore network integrated structure provided by the embodiment of the present invention; figure 2 A three-dimensional schematic diagram of the micro-nano pore network integrated structure provided by the embodiment of the present invention is shown. image 3 A schematic cross-sectional view of the micro-nano pore network integrated structure provided by the embodiment of the present invention is shown.
[0054] A nanopore detection system based on a micro-nano pore network integrated structure provided in this embodiment includes an electrolyte solution chamber, a micro-nano pore network integrated structure and a current detection system;
[0055] The micro-nano mesh integrated structure includes a nanoporous film and a grid layer film arranged thereon. The nanoporous film in this embodiment is a silicon nitride film 1; the grid layer film is a...
Embodiment 2
[0084] The preparation method of the micro-nano-grid-nanohole vertically integrated structure provided in this embodiment is specifically implemented according to the following steps:
[0085] The nanoporous film provided in this embodiment is a self-supporting silicon nitride film, and the self-supporting silicon nitride film is actually a silicon nitride film that does not need a substrate support. The grid layer film is silicon dioxide film.
[0086] 1) On both sides of the silicon wafer, use low-pressure chemical vapor deposition or plasma-enhanced chemical vapor deposition to grow silicon nitride films; then form a self-supporting silicon nitride film through a semiconductor process;
[0087] 2) Using focused ion beam or transmission electron microscopy to form nanopores on silicon nitride films;
[0088] 3) growing an amorphous carbon film on the nanopore;
[0089] 4) growing a silicon dioxide film on the amorphous carbon film;
[0090] 5) Making micro-nano grid struc...
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