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Method for preparing transistor T type nano grid

A transistor and nanotechnology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor adhesion, difficult removal of electron beam glue, and influence on gate foot exposure and development, etc., to achieve electron beam exposure And developing conditions are relaxed, the developing time is easy to control, and the effect of developing is easy to control

Active Publication Date: 2008-10-01
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the first layer and the third layer of electron beam glue used to define the grid cap and grid foot are both ZEP520A glue, their sensitivity to electron beam exposure is consistent. Therefore, this process has very strict requirements on the selection of the dose of two electron beam exposures and the control of the development conditions, and the process is difficult to realize.
[0009] In addition, due to the poor adhesion between ZEP520A and the epitaxial wafer, a layer of dielectric needs to be deposited before coating. The dielectric is usually silicon nitride or silicon dioxide. After exposure and development, the dielectric at the gate groove must be etched away. , the etching of nano-sized thin lines is difficult to control, the process is difficult, and the underlying ZEP520A electron beam glue is difficult to remove, which is easy to affect the characteristics of the device

Method used

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  • Method for preparing transistor T type nano grid
  • Method for preparing transistor T type nano grid
  • Method for preparing transistor T type nano grid

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Embodiment

[0069] The method for fabricating the T-type nano-gate of the high electron mobility transistor (HEMT) in this embodiment is aimed at some deficiencies in the production of the T-type nano-gate of the high electron mobility transistor (HEMT) at present, and adopts four layers of PMGI / ZEP520A / PMGI / UVIII Electron beam photoresist structure (as shown in Table 1) and two electron beam exposure methods to fabricate high electron mobility transistor (HEMT) T-type nano-gate.

[0070] Table 1 is a structural representation of the PMGI / ZEP520A / PMGI / UVIII four-layer electron beam photoresist used in the method for making a high electron mobility transistor (HEMT) T-type nano-gate of the present invention:

[0071]

[0072] Table 1

[0073] In this embodiment, the first layer of electron beam glue and the third layer of electron beam glue that are easy to realize deglue and stripping are PMGI electron beam glue, which is adopted in the method for making a high electron mobility transi...

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PUM

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Abstract

The invention discloses a method for manufacturing transistor T-shaped nanometer gate, comprising the steps of: A, coating a first layer electric beam glue which is liable to realize glue-stripping and peeling on a cleaned epitaxial wafer, and then soft-baking; B, coating a second layer electric beam glue ZEP520A on the first layer electric beam glue, and then soft-baking; C, coating a third layer electric beam glue which is liable to realize glue-stripping and peeling on the second layer electric beam glue ZEP520A, and then soft-baking; D, coating a fourth layer electric beam glue UVIII on the third layer electric beam glue, and then soft-baking; E, carrying out gate cap electric beam exposure, and sequentially developing the four layer electric beam glue UVIII, the third layer electric beam glue which is liable to realize glue-stripping and peeling; F, carrying out the gate feet electric beam exposure, and sequentially developing the second layer electric beam glue ZEP520A and the first layer electric beam glue which is liable to realize glue-stripping and peeling; G, eroding the gate groove, evaporating and peeling off gate metals to form the transistor T-shaped nanometer gate. Usage of the invention can easily manufacture the gate lines having small size, greatly reducing the process difficulty.

Description

technical field [0001] The invention relates to the technical field of compound semiconductors, in particular to a method for manufacturing a transistor T-shaped nano-gate with high electron mobility. Background technique [0002] Gate fabrication is the most critical process in the high electron mobility transistor (HEMT) device fabrication process. Since the gate length directly determines the frequency, noise and other characteristics of the HEMT device, the smaller the gate length, the current cutoff frequency of the device (f T ) and power gain cutoff frequency (f max ) The higher the noise figure of the device is, the smaller the noise figure of the device is. People can obtain devices with better characteristics by continuously reducing the gate length of high electron mobility transistor (HEMT) devices. [0003] As the gate length shortens, the gate resistance increases, and when the gate length decreases below 0.5 μm, the microwave loss of the gate resistance make...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/335
Inventor 刘亮张海英刘训春
Owner SEMICON MFG INT (SHANGHAI) CORP
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