Production method of transistor T-shaped nano grid

Abstract

The invention discloses a fabrication method for a T-Shaped nanometer-gate of a transistor, which comprises the following steps of: A. coating a first layer of electronic beam glue which is easy to erase and strip and prebaking; B. coating a second layer of electronic beam glue ZEP520A on the first layer of electronic beam glue and prebaking; C. coating a third layer of electronic beam glue which is easy to erase and strip on the second layer of electronic beam glue ZEP520A and prebaking; D. coating a fourth layer of electronic beam glue ZEP520A on the third layer of electronic beam glue and prebaking; E. exposing grid electronic beam and developing the third layer of electronic beam glue and the fourth layer of electronic beam glue ZEP520A in sequence; F. Exposing grid electronic beam and developing the second layer of electronic beam glue ZEP520A and the first layer of electronic beam glue in sequence; G. corroding a gate channel and evaporating gate metal and stripping to form a transistor T-shaped nanometer-gate. With the invention, extreme small gate bars can be fabricated very easily with strong reliability but without growing and etching medium, greatly reducing the difficulty of the technology.

Description

technical field [0001] The invention relates to the technical field of compound semiconductors, in particular to a method for preparing a T-shaped nano-gate of a high electron mobility transistor. Background technique [0002] Gate preparation is the most critical process in the manufacturing process of High Electron Mobility Transistor (HEMT) devices. Since the gate length directly determines the frequency, noise and other characteristics of the HEMT device, the smaller the gate length, the current cutoff frequency of the device (f T ) and power gain cutoff frequency (f max ) The higher the noise figure of the device is, the smaller the noise figure of the device is. People can obtain devices with better characteristics by continuously reducing the gate length of high electron mobility transistor (HEMT) devices. [0003] As the gate length shortens, the gate resistance increases, and when the gate length decreases below 0.5 μm, the microwave loss of the gate resistance ma...

AI Technical Summary

Problems solved by technology

Due to the poor adhesion between ZEP520A and the epitaxial wafer, a layer of dielectric needs to be deposited before uniform coating. The dielectric is usually silicon nitride or silicon dioxide. After exposure and development, the dielectric at the gate groove must be etched away. The size of thin line etching is difficult to control, the process is difficult, and the underlying ZEP520A electron beam glue is difficult to remove, which is easy to affect the characteristics of the device

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