SiGe bipolar complementary metal oxide semiconductor (BiCMOS) radio-frequency power amplifier

A radio frequency power and power amplification technology, applied in power amplifiers, high frequency amplifiers, etc., can solve problems such as loss, achieve high output power, increase breakdown voltage, and reduce power consumption
CN102006015AInactive Publication Date: 2011-04-06DONGHUA UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
DONGHUA UNIV
Publication Date
2011-04-06
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention relates to a SiGe bipolar complementary metal oxide semiconductor (BiCMOS) radio-frequency power amplifier. The amplifier comprises a first-stage pre-amplification transistor, a second-stage power amplification transistor, a first-stage biasing circuit, a second-stage biasing circuit, an input matching network and an impedance conversion network. The circuit structure of the invention consists of a first-stage pre-amplification circuit and a second-stage power amplification circuit which are connected with each other through a coupling capacitor. The first-stage pre-amplification transistor is a standard SiGe transistor, and the linearity of the circuit is enhanced by a remote control (RC) serial feedback circuit; and the second-stage power amplification transistor is a high-voltage SiGe transistor and can reach relatively high output power. Both the first biasing circuit and the second biasing circuit have bipolar transistor current mirror structures, and temperature stability is enhanced by temperature negative feedback technology. The amplifier has high linearity and relatively high output power.
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Description

technical field

[0001] The invention relates to the technical field of CMOS radio frequency integrated circuit design, in particular to a radio frequency power amplifier based on silicon germanium bipolar-complementary oxide transistor technology (abbreviated as "SiGe BiCMOS"). Background technique

[0002] In recent years, with the rapid development of short-distance wireless communication technology standards within the range of Wireless Local Area Network (WLAN), portable devices with flexibility, convenience, and fast transmission rates are increasingly favored by people. 2.4GHz is the wireless ISM (Industry Science Medicine) frequency band that is open and common all over the world. Working in the 2.4GHz frequency band can obtain a wider range of use and stronger anti-interference ability. ZigBee / IEEE 802.15.4, Wi-Fi / IEEE 802.11b, Bluetooth (Bluetooth) / IEEE 802.15.1, and Wireless USB (Wireless USB) all work in the 2.4GHz frequency band. With the development of products ...

Claims

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