SiGe bipolar complementary metal oxide semiconductor (BiCMOS) radio-frequency power amplifier

A technology of radio frequency power and power amplification, applied in power amplifiers, high frequency amplifiers, etc., can solve problems such as loss, achieve high output power, good linearity adjustment, and low cost

Inactive Publication Date: 2012-11-07
DONGHUA UNIV
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

Because the value of the inductance quality factor Q of the integrated circuit is relatively small, it is likely to cause a certain loss, which is not advisable for portable devices.

Method used

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  • SiGe bipolar complementary metal oxide semiconductor (BiCMOS) radio-frequency power amplifier
  • SiGe bipolar complementary metal oxide semiconductor (BiCMOS) radio-frequency power amplifier
  • SiGe bipolar complementary metal oxide semiconductor (BiCMOS) radio-frequency power amplifier

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Embodiment Construction

[0026] Below in conjunction with specific embodiment, further illustrate the present invention. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the teachings of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.

[0027] The present invention relates to a kind of SiGe BiCMOS radio frequency power amplifier, as figure 2As shown, it includes a first-level pre-amplification transistor T4, a second-level power amplification transistor T8, a first-level bias circuit, a second-level bias circuit, an input matching network and an impedance transformation network. The output terminal of the input matching network and the output terminal of the...

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Abstract

The invention relates to a SiGe bipolar complementary metal oxide semiconductor (BiCMOS) radio-frequency power amplifier. The amplifier comprises a first-stage pre-amplification transistor, a second-stage power amplification transistor, a first-stage biasing circuit, a second-stage biasing circuit, an input matching network and an impedance conversion network. The circuit structure of the invention consists of a first-stage pre-amplification circuit and a second-stage power amplification circuit which are connected with each other through a coupling capacitor. The first-stage pre-amplification transistor is a standard SiGe transistor, and the linearity of the circuit is enhanced by a remote control (RC) serial feedback circuit; and the second-stage power amplification transistor is a high-voltage SiGe transistor and can reach relatively high output power. Both the first biasing circuit and the second biasing circuit have bipolar transistor current mirror structures, and temperature stability is enhanced by temperature negative feedback technology. The amplifier has high linearity and relatively high output power.

Description

technical field [0001] The invention relates to the technical field of CMOS radio frequency integrated circuit design, in particular to a radio frequency power amplifier based on silicon germanium bipolar-complementary oxide transistor technology (abbreviated as "SiGe BiCMOS"). Background technique [0002] In recent years, with the rapid development of short-distance wireless communication technology standards within the range of Wireless Local Area Network (WLAN), portable devices with flexibility, convenience, and fast transmission rates are increasingly favored by people. 2.4GHz is the wireless ISM (Industry Science Medicine) frequency band that is open and common all over the world. Working in the 2.4GHz frequency band can obtain a wider range of use and stronger anti-interference ability. ZigBee / IEEE 802.15.4, Wi-Fi / IEEE 802.11b, Bluetooth (Bluetooth) / IEEE 802.15.1, and Wireless USB (Wireless USB) all work in the 2.4GHz frequency band. With the development of products ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/20H03F3/189
Inventor 褚红玉陈光杨继斌于淑媛韩秀玲吴春丽
Owner DONGHUA UNIV
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