Full-difference E-type power amplifier

A power amplifier, fully differential technology, applied in differential amplifiers, power amplifiers, DC-coupled DC amplifiers, etc., can solve the problems of reducing power efficiency, suppressing second harmonics, and excessive input signals to reduce substrate coupling , the effect of suppressing the second harmonic and suppressing interference

Inactive Publication Date: 2010-04-21
EAST CHINA NORMAL UNIVERSITY
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, this traditional one-stage single-ended structure has no way to suppress the second harmonic well, which will bring serious harmonic dist

Method used

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  • Full-difference E-type power amplifier

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Embodiment Construction

[0022] The technical solution of the present invention is a specific embodiment, and the embodiment will not be repeated here. The working process of the present invention will be described in detail below.

[0023] See figure 2 , BIAS1 and BIAS2 are biased at 1.2V, BIAS3 and BIAS4 are biased at 800mV, and the transistors in the preamplifier stage and power amplifier stage are biased at the boundary of the amplifying zone and the saturation zone respectively by adjusting the bias resistance reasonably. The envelope input signal is differentially input through IN1 and IN2, and is output from the collector of the first transistor Q1 and the collector of the second transistor Q2 after pre-amplification to form a fast switching approximate spike pulse signal to drive the differential of the power amplifier stage Input terminal and output to the antenna from OUT1 terminal and OUT2 terminal after power amplification. When the pre-amplification stage is working, the first transistor Q...

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Abstract

The invention discloses a full-difference E-type power amplifier. The amplifier is a circuit composed of a Bipolar device, a CMOS device and a passive device, wherein a difference input pair is the Bipolar device; a cross coupling pair is an NMOS tube; the amplifier adopts a two-stage structure, the first pre-amplifying stage performs a pretreatment for an input constant envelope signal so as to meet the requirement for fast opening and closing of the second power amplifying stage; and the cross coupling pair structure is added into each stage so as to accelerate the on/off speed, satisfy high frequency application and reduce the width length ratio of a main switching pipe. Meanwhile, the difference input also avoids the influence of a second harmonic wave on a substrate, completely filters and removes secondary and high and even order harmonic waves and eliminates the substrate coupling such that the device is not easy to puncture. The invention has the following advantages of high power efficiency, low harmonic distortion, low power voltage, simple structure, fast working speed and low power consumption and the like.

Description

Technical field [0001] The invention relates to the technical field of radio frequency integrated circuit design, in particular to a SiGe BiCMOS (silicon germanium bipolar-complementary metal oxide semiconductor) fully differential class E power amplifier. Background technique [0002] In recent years, with the rapid development of radio frequency integrated circuit technology, many wireless communication products have been used in daily life, and the ever-increasing requirements for low power consumption, low cost and portability have put forward higher standards for the design of these wireless communication products. At present, there have been many successful cases of using CMOS (Complementary Metal Oxide Semiconductor) technology to integrate single-chip RF transceivers, but it is still a huge challenge to integrate a high-performance power amplifier (PA) on the front-end chip of the RF transceiver. Since the power amplifier has high output power and occupies most of the pow...

Claims

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Application Information

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IPC IPC(8): H03F3/20H03F3/45
Inventor 陈磊田亮赖宗声马和良周进黄爱波王超顾彬阮颖崔建明
Owner EAST CHINA NORMAL UNIVERSITY
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