Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Full-difference E-type power amplifier

A power amplifier, fully differential technology, used in differential amplifiers, power amplifiers, DC-coupled DC amplifiers, etc., can solve problems such as reducing power efficiency, suppressing second harmonics, and excessive input signals, reducing substrate coupling. , the effect of suppressing the second harmonic and suppressing interference

Inactive Publication Date: 2011-07-27
EAST CHINA NORMAL UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this traditional one-stage single-ended structure has no way to suppress the second harmonic well, which will bring serious harmonic distortion and coupling distortion. The input signal of the other stage power amplification structure is too large, thereby reducing power efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Full-difference E-type power amplifier
  • Full-difference E-type power amplifier
  • Full-difference E-type power amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The technical solution of the present invention is a specific embodiment, and the embodiment will not be repeated here. The working process of the present invention is described in detail below.

[0023] refer to figure 2, BIAS1 and BIAS2 are biased at 1.2V, BIAS3 and BIAS4 are biased at 800mV, and the transistors in the pre-amplification stage and power amplifier stage are respectively biased at the boundary of the amplification region and the saturation region by adjusting the bias resistors reasonably. The envelope input signal is differentially input through the IN1 terminal and the IN2 terminal, and output from the collector of the first transistor Q1 and the collector of the second transistor Q2 after pre-amplification, forming a fast switching approximate peak pulse signal, driving the differential of the power amplifier stage input terminal, and output to the antenna from OUT1 and OUT2 terminals after power amplification. When working in the pre-amplification...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a full-difference E-type power amplifier. The amplifier is a circuit composed of a Bipolar device, a CMOS device and a passive device, wherein a difference input pair is the Bipolar device; a cross coupling pair is an NMOS tube; the amplifier adopts a two-stage structure, the first pre-amplifying stage performs a pretreatment for an input constant envelope signal so as to meet the requirement for fast opening and closing of the second power amplifying stage; and the cross coupling pair structure is added into each stage so as to accelerate the on / off speed, satisfy high frequency application and reduce the width length ratio of a main switching pipe. Meanwhile, the difference input also avoids the influence of a second harmonic wave on a substrate, completely filters and removes secondary and high and even order harmonic waves and eliminates the substrate coupling such that the device is not easy to puncture. The invention has the following advantages of high power efficiency, low harmonic distortion, low power voltage, simple structure, fast working speed and low power consumption and the like.

Description

technical field [0001] The invention relates to the technical field of radio frequency integrated circuit design, in particular to a SiGe BiCMOS (silicon germanium bipolar-complementary metal oxide semiconductor) fully differential Class E power amplifier. Background technique [0002] In recent years, with the rapid development of radio frequency integrated circuit technology, many wireless communication products are used in daily life, and the ever-increasing requirements of low power consumption, low cost and portability put forward higher standards for the design of these wireless communication products. At present, there have been many successful cases of integrating single-chip RF transceivers using CMOS (Complementary Metal Oxide Semiconductor) technology, but integrating high-performance power amplifiers (Power Amplifier, PA) on the front-end chip of RF transceivers is still a huge challenge. Because the power amplifier has high output power, it occupies most of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/20H03F3/45
Inventor 陈磊田亮赖宗声马和良周进黄爱波王超顾彬阮颖崔建明
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com