Method for producing low-temperature polysilicon thin film transistor with crystallized bottom metals

Abstract

The invention relates to a method for producing a low-temperature polysilicon thin film transistor with crystallized bottom metals, which belongs to the field of photoelectricity. The method for producing a low-temperature polysilicon thin film transistor with crystallized bottom metals is provided by the invention. By utilizing the method, the high current leakage characteristic of the low-temperature polysilicon thin film transistor can be improved. The method comprises a step of enhancing the chemical vapor deposition by plasmas or preparing an amorphous silicon thin film layer through chemical vapor deposition, and a step of utilizing Ni atomic units to plate a Ni metal layer by evaporation or sputtering evaporation, wherein the step of utilizing the Ni atomic units to plate a Ni metal layer by evaporation or sputtering evaporation is performed firstly, and then the step of enhancing the chemical vapor deposition by plasmas or preparing the amorphous silicon thin film layer through chemical vapor deposition is performed.

Description

technical field [0001] The invention relates to a method for producing a low-temperature polysilicon thin film transistor whose bottom metal is crystallized, and belongs to the field of optoelectronics. Background technique [0002] Thin-film transistors (TFTs) can be divided into two categories: amorphous silicon thin-film transistors (a-Si TFTs) and polysilicon thin-film transistors (poly-Si TFTs), both of which have their own advantages and disadvantages. Amorphous silicon thin film transistors (a-Si TFT) have high production efficiency and good uniformity; polycrystalline silicon thin film transistors (poly-Si TFT) have the advantage of high electron mobility. Active matrix organic light-emitting diode panel (AMOLED) is different from LCD, which is driven by current, so electron mobility characteristics are of great significance to AMOLED, and polysilicon thin film transistor (poly-Si TFT) is more suitable for AMOLED. [0003] Polysilicon thin film transistors are manuf...

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Problems solved by technology

[0019] However, the above method uses ALD (atomic unit deposition) equipment for Ni atomic unit deposition or sputtering deposition of tens of After the Ni metal layer, the unreacted metal (Ni) will contaminate the film, making Si, which should be a semiconductor, become close to a conductor, resulting in high leakage characteristics of the product

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