Groove MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) device and making method thereof

A trench and trench gate technology is applied in the field of trench MOSFET devices and their manufacturing, which can solve problems such as over-etching, and achieve the effects of reducing Rds, reducing Qgd, and avoiding short-circuits.
CN102013438AInactive Publication Date: 2011-04-13FORCE MOS TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
FORCE MOS TECH CO LTD
Publication Date
2011-04-13
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a groove MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) structure and a making method. In the structure, the depth of a gate contacting with a groove in a groove gate is smaller than that of a source body contacting with the groove in a body region. The groove MOSFET is adopted to efficiently prevent short circuit between the gate and drain caused by over etching of the gate contacting with the groove.
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Description

technical field

[0001] The invention mainly relates to a unit structure and a manufacturing method of a semiconductor power device. In particular, it relates to an improved trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor) structure and its novel manufacturing method, so that the trench MOSFET structure can avoid gate-drain short circuit. Background technique

[0002] An N-channel trench MOSFET device using a trench-type gate contact region and a trench-type source-body contact region in the prior art is shown in FIG. 1A . The structure of the N-channel trench MOSFET includes: a substrate 100 of N+ conductivity type; an epitaxial layer 102 of N conductivity type; a P-type body region 106; an N+ source region 108; a plurality of trench gates 110 located in the active region and At least one trench gate 110' for gate contact, the trench gates 110 and 110' are filled with polysilicon; source metal 112; gate metal 112'; trenched source-body contact region 114; t...

Claims

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