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Micromechanical component and method for producing the same

A technology of micromachines and components, applied in the field of manufacturing components of micromachines

Inactive Publication Date: 2011-04-13
ROBERT BOSCH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Micromechanical component and method for producing the same
  • Micromechanical component and method for producing the same
  • Micromechanical component and method for producing the same

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Embodiment Construction

[0024] exist Figure 1a The first method step is the thermal oxidation of the silicon wafer 1 . Here, a silicon dioxide layer 2 is produced thermally on the substrate of a silicon wafer 1 . Silicon wafer 1 is advantageously provided such that it is suitable for use in high-frequency technology with regard to purity or other parameters.

[0025] Figure 1b The next step is shown. This step includes applying and structuring a first electrode 3 on the oxide layer 2 of the silicon wafer 1 . The material of the electrode may comprise, for example, aluminum, nickel, copper and / or gold. This structuring of the first electrode 3 can also be referred to as initial metallization.

[0026] exist Figure 1c The next step shown in involves covering at least part of the first electrode 3 with a silicon dioxide layer 4 . Thus, the dielectric is also applied to at least a part of the electrode.

[0027] Then, Figure 1dDeposition and structuring of a SiGe sacrificial layer 5, 5'...

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Abstract

The invention relates to a method for producing micromechanical components, wherein a substrate (1) having at least one metal layer (3, 6, 7, 7') and a sacrificial layer (5, 5') comprising SiGe are structured and the sacrificial layer (5, 5') is at least partially removed by etching with a fluorine-containing compound such as ClF3, the substrate (1) which carries the sacrificial layer (5, 5') andthe metal layer (3, 6, 7, 7') being tempered at a temperature of >= 100 DEG C to <= 400 DEG C prior to the sacrificial layer (5, 5') being etched. The material of the metal layer (3, 6, 7, 7') can comprise aluminum. The invention further relates to a micromechanical component which comprises a metal layer (3, 6, 7, 7'), the material of the metal layer having a polycrystalline structure and >= 90% of the crystallites having a size of >= 1 [mu]m to <= 100 [mu]m. The invention also relates to the use of said micromechanical components as pressure sensors, high-frequency switches or as varactor.

Description

technical field [0001] The invention relates to a micromechanical component and a method for producing the micromechanical component. In particular, the invention relates to a method for producing micromechanical components, in which a substrate having at least a metal layer and a sacrificial layer comprising SiGe is structured. Such a metal layer can be formed, for example, as a film. Background technique [0002] High-frequency switches for the gigahertz range, such as occur for example in radar technology, can be produced by means of microelectromechanical system technology (MEMS technology). In this case, a metal bridge is used as the switching element, which is constructed in a cantilevered manner by a Microsystems Technology process (MST process) and is electrostatically connected, ie referred to. Cutting out the bridge has proven to be technically demanding and has hitherto been achieved by means of sacrificial varnish technology. [0003] DE 10 2005 004 877 A1 dis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C1/00666B81B2201/0264H01H59/0009B81C1/00158B81B2201/016
Inventor T·布克M·斯图姆贝尔
Owner ROBERT BOSCH GMBH