Self-cleaning large-scale method for selenylation of a thin film photovoltaic material
A diselenide and semiconductor technology, applied in the field of photovoltaic technology, can solve problems such as difficult cleaning and insufficient cleaning, and achieve the effect of easy cleaning and cost saving
Inactive Publication Date: 2015-03-11
发展专家公司
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
While traditional techniques of the past have addressed some of these issues, they are often insufficient in many cases
Among other things, the systems used to fabricate CIS and / or CIGS thin films (e.g., process chambers) are often difficult to clean
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0020] The present invention generally relates to photovoltaic technology. More specifically, the present invention provides a method and structure for thin film photovoltaic devices using copper indium diselenide (CIS), copper indium gallium diselenide (CIGS), and / or others. The invention can be applied to photovoltaic modules, flexible sheets, glass for buildings or windows, automobiles, etc.
[0021] figure 1 is a simplified diagram of a transparent substrate with overlapping electrode layers according to one embodiment of the invention. This diagram is just one example, which should not limit the scope of the claims herein. As shown, the structure 100 includes a transparent substrate 104 . In one embodiment, the substrate 104 may be a glass substrate, such as soda lime glass. However, other types of substrates may also be used. Examples of substrates include borosilicate glass, acrylic glass, sugar glass, special Corning TM glass etc. As shown, a contact layer compr...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention provides a self-cleaning large-scale method for selenylation of a thin film photovoltaic material and a furnace system. The method for producing a copper-indium diselenide semiconductor film using a self-cleaning furnace comprises the following steps: transferring a plurality of base plates into the furnace, wherein the furnace comprises a processing area and at least one end cap area detachably connected with the processing area and the base plates are vertically orientated and arranged relative to the gravity direction and limited using the number N and the N is larger than 5 and each base plate comprises a copper and indium composite structure. The method also comprises another steps: guiding a gaseous substance containing a hydrogen substance, a selenide substance and a carrier gas into the furnace and transferring the heat energy into the furnace, therefore the temperature rises to the second temperature from the first temperature and the range of the second temperature is about 350 DEG C and about 450 DEG C and at least initially, the copper and indium composite structure on each base plate forms the copper-indium diselenide film; decomposing the residual selenide substance in the inner area of the processing area of the furnace.
Description
technical field [0001] The present invention generally relates to photovoltaic technology. More specifically, the present invention provides a method for using copper indium diselenide (or copper indium selenide, CIS), copper indium gallium diselenide (or copper indium gallium selenide, CIGS) and / or other substances Methods and structures of thin-film photovoltaic devices. The invention can be applied to photovoltaic modules, flexible sheets, glass for buildings or windows, automobiles, etc. Background technique [0002] During the fabrication of CIS and / or CIGS type thin films, there are various manufacturing challenges such as maintaining the structural integrity of the substrate material, ensuring the uniformity and grain size of the thin film material, etc. While conventional techniques in the past have addressed some of these problems, they are often insufficient in many situations. Among other things, systems (eg, process chambers) used to fabricate CIS and / or CIGS ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C23C16/52C23C16/04C23C16/28
CPCY02P70/50
Inventor 罗伯特D·维廷
Owner 发展专家公司