Nitride semiconductor layer-containing structure, nitride semiconductor layer-containing composite substrate and production methods of these
A technology of nitride semiconductor and fabrication method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of unavoidable nitride semiconductor damage and complex structure, etc.
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no. 1 example
[0100] As a first embodiment of the present invention, an example of a structure including a nitride semiconductor is described. figure 1 A schematic cross-sectional view showing an example of the nitride semiconductor-containing structure in this embodiment is shown.
[0101] figure 1 A structure 20 including a nitride semiconductor, a first nitride semiconductor layer 40 , a raised portion 42 of the first nitride semiconductor layer, and a portion 45 including crystal defects in the first nitride semiconductor layer are shown.
[0102] figure 1 Also shown are the second nitride semiconductor layer 50 , the nitride semiconductor 51 formed in the recessed portion of the first nitride semiconductor layer, and the void 62 in the nitride semiconductor structure.
[0103] The nitride semiconductor-containing structure 20 of the present embodiment is formed of the first nitride semiconductor layer 40, the second nitride semiconductor layer 50, and the gap 62 in the nitride semico...
no. 2 example
[0142] As a second embodiment of the present invention, an example of a composite substrate including a nitride semiconductor will be described.
[0143] image 3 A schematic cross-sectional view showing an example of the nitride semiconductor-containing composite substrate in this embodiment is shown.
[0144] image 3 Shown are a base substrate 10, a raised portion 12 of the base substrate, a composite substrate 30 including a nitride semiconductor, a nitride semiconductor 41 formed in a recessed portion of the base substrate, and a gap 61 between the base substrate and the nitride semiconductor.
[0145] The nitride semiconductor-containing composite substrate 30 in this embodiment is formed of the base substrate 10 and the nitride semiconductor-containing structure 20 .
[0146] The base substrate 10 and the structure 20 may be connected to each other without any gap therebetween. When the structure 20 is formed on the base substrate 10 by crystal growth, in order to en...
no. 3 example
[0175] An example of a method of manufacturing a nitride semiconductor-containing composite substrate as a third embodiment of the present invention will be described.
[0176] Figure 5A to Figure 5F A schematic cross-sectional view showing an example of a method of producing a nitride semiconductor-containing composite substrate in this embodiment is shown.
[0177] When making the composite substrate, first prepare the base substrate 10 ( Figure 5A ).
[0178] The base substrate 10 may be a simple single crystal substrate. The material of the base substrate 10 is, for example, any of a nitride semiconductor typified by GaN, sapphire, silicon (Si), and silicon carbide (SiC).
[0179] In the base substrate 10, on a simple single crystal substrate, an intermediate film (not shown) homogeneous or heterogeneous to the single crystal substrate may be further formed depending on the intended purpose.
[0180] The intermediate film may be a multilayer film. As an example, the i...
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Abstract
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