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AlN bulk single crystal, semiconductor device, and process for producing AlN single crystal bulk

A semiconductor and single crystal technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve problems such as poor matching of SiC crystal thermal expansion coefficient and device performance degradation

Inactive Publication Date: 2011-05-04
KAWATETABU MINING +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, such heteroepitaxial growth of AlN on SiC causes new defects at the interface between SiC and AlN due to poor matching of crystal constants, thermal expansion coefficients, etc. of SiC crystals and AlN crystals
Using the resulting AlN single crystal on a device may lead to a decrease in device performance due to the defects of the AlN single crystal

Method used

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  • AlN bulk single crystal, semiconductor device, and process for producing AlN single crystal bulk
  • AlN bulk single crystal, semiconductor device, and process for producing AlN single crystal bulk
  • AlN bulk single crystal, semiconductor device, and process for producing AlN single crystal bulk

Examples

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Embodiment 1

[0060] In Example 1, using image 3 The single crystal growth furnace shown. Commercially available AlN powder (average particle diameter: 1.2 μm) was previously heat-treated in a nitrogen atmosphere at about 1500° C. to about 2000° C. to obtain an AlN aggregate, which was added to the crucible 16 as a raw material 15 bottom. A SiC single crystal serving as the seed substrate 12 having a diameter of 25 mm and a thickness of 1.0 mm was placed on the support 13 so that the surface (habitual plane 21 ) of the seed substrate 12 was the (01-15) plane. A tungsten plate (not shown) serving as a lid was placed on the single crystal growth furnace. Afterwards, the atmospheric gas in the single crystal growth furnace 11 was exhausted by using an exhaust pump to reach 1.0×10 -3 Pa or 1.0×10 -3 Pressure below Pa. The crucible 16 is then heated to about 400° C. in order to facilitate the evaporation of the absorbed oxygen from the feed material 15 . Next, the atmospheric gas is exhau...

Embodiment 2

[0062] Implement the steps of growing AlN single crystal 6 ( figure 1 (e)), in which the AlN bulk single crystal obtained from Example 1 is used as a new seed crystal 5 and the new seed crystal 5 is placed on the support 13 so that the habitual surface 21 is ( 01-12), Example 2 was carried out in the same manner as in Example 1 except that.

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Abstract

Disclosed is an AlN single crystal bulk, which, even when a single crystal of a dissimilar material is used as a crystal, suffers from no significant defects and has high quality. Also disclosed are a process for producing the AlN single crystal bulk and a semiconductor device. The production process is characterized in that a plane inclined by 10 to 80 degrees to a C plane is selected as a surface (1a) of a hexagonal single crystal substrate which is a seed crystal (1) (Fig 1(a)) and an AlN single crystal (2) is grown as a growth plane (2a) on the surface (1a) by a sublimation method (Fig 1(b)).

Description

technical field [0001] The present invention relates to semiconductor devices such as light-emitting devices, electronic devices, and semiconductor sensors, and methods for producing AlN single crystals; in particular, methods for producing large-diameter AlN bulk single crystals by a sublimation method. Background technique [0002] Since AlN crystals have a wide energy band gap, high thermal conductivity, and high electrical resistance, AlN crystals have attracted attention in recent years as substrate materials for various semiconductor devices such as optical devices and electronic devices. [0003] A conventional method of producing an AlN single crystal includes a sublimation method in which, as disclosed in Patent Document 1, an AlN crystal material is charged in a crucible and the sublimated AlN is grown as a single crystal. This sublimation method is carried out as follows: a material powder of a single crystal is mixed with an oxide powder which reacts with the mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C30B23/06
CPCC30B23/025C30B29/403Y10T428/2982
Inventor 永田俊郎阿尔博瑞特·文纳克尔鲍里斯·M·爱普鲍姆马提亚·柏克曼恩奥克塔维安·菲利普保罗·黑曼恩
Owner KAWATETABU MINING