Reflector, manufacturing method thereof and luminescent device applying same

Abstract

The invention discloses a reflector used for a gallium nitride-based luminescent device and a manufacturing method thereof and a luminescent device applying the reflector. The reflector is formed on a P-type gallium nitride-based epitaxial layer and comprises whisker crystals and a metal reflecting layer, wherein the whisker crystals are made from undoped gallium nitride, distributed in a certain density, formed on the surface of the P-type gallium nitride-based epitaxial layer in a position corresponding to a dislocation defect of the epitaxial layer; and the metal reflecting layer is formed on the P-type gallium nitride-based epitaxial layer and the whisker crystals. Undoped gallium nitride-based whisker crystals are arranged on the dislocation defect of the P-type GaN-based epitaxial layer, thus an Ag reflecting layer can be separated from the dislocation defect of the P-type GaN-based epitaxial layer, Ag is effectively inhibited from permeating into the inside of the dislocation defect in an electromigration way and electric leakage probability of the luminescent device comprising an Ag reflector can be greatly decreased.

Description

technical field [0001] The invention relates to a reflector for a gallium nitride-based light-emitting device, a manufacturing method thereof, and a gallium-nitride-based light-emitting device including the reflector. Background technique [0002] In recent years, semiconductor lighting technology represented by gallium nitride-based wide bandgap semiconductor materials has developed rapidly. Gallium nitride-based light-emitting diode devices have been widely used in various fields such as display, indication, backlight and lighting. [0003] For gallium nitride-based light-emitting diodes, the most common epitaxial structure is the p-type epitaxial layer on the top surface (p-side up), and according to the light-emitting surface, it can be divided into conventional structure and flip-chip structure. The gallium nitride-based light-emitting diode with a conventional structure uses the p-type layer as the light-emitting surface. In order to expand the current and increase th...

AI Technical Summary

Problems solved by technology

Silver is the metal with the highest reflectivity in nature, and it is widely used in flip-chip light-emitting diodes, but silver is prone to electromigration effects, and because gallium nitride-based materials are generally based on substrate growth with mismatched lattice and thermal expansion coefficients There is a large density of dislocation defects in the crystal, and the electromigration of silver can easily penetrate into the active layer through the dislocation defects, which will cause leakage or short circuit failure of the light emitting diode.

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