Method for improving fault-tolerant capability of high-speed cache of magnetoresistance RAM (Random Access Memory)

Abstract

The invention provides a method for improving the fault-tolerant capability of a high-speed cache of a magnetoresistance RAM (Random Access Memory), which is capable of effectively correcting or tolerating random storing and writing errors and realizing a lower storing and writing voltage or a higher storing and writing speed. The storing and writing operation substitutes traditional storing and writing operation by adopting a recursive write-read-check technology to correct random storing and writing errors caused by changing the storing and writing capacity limit or the storing and writing speed. The write-read-check technology means that data are written into a high-speed cache of an MRAM (Magneto-Resistive Random Access Memory), immediately read out and compared with written data; andthe write-read-check operation is repeated until all data bits are rightly programmed in case of failures. Based on the write-read-check operation, error-checking codes or error record buffer logic is added to the MRAM high-speed cache, the fault-tolerant capability of the MRAM high-speed cache is enhanced and processor performance degradation brought by the write-read-check operation is reduced.

Description

technical field [0001] The invention belongs to the technical field of memory and computer architecture, in particular to a method for improving the anti-error ability of the magnetoresistive random access memory cache. Background technique [0002] Magneto-resistive random access memory (MRAM) is one of the new memory technologies that has attracted the most attention in the industry. Compared with traditional memory technology, magnetoresistive RAM has the advantages of non-volatility, high storage density, strong scalability, fast read and write speed, and low static power consumption. Therefore, magnetoresistive RAM is considered to be the most competitive embedded memory technology under the smaller-scale integrated circuit technology in the future, and has broad application prospects. Among them, the on-chip cache of high-performance processors is the main application field of MRAM. The design of on-chip cache by using magnetoresistive random access memory instead of...

AI Technical Summary

Problems solved by technology

However, new research shows that there are insurmountable technical constraints on the write tolerance of magnetoresistive RAM

When the storage and writing voltage of the magnetoresistive RAM is too high, it is easy to cause permanent failure of the magnetic tunnel junction; at the same time, a low storage and writing voltage will cause a large number of random storage and writing errors

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