Method for preparing c-axle vertical alignment patterned magnetic recording medium
A magnetic recording medium and vertical orientation technology, which is applied in the direction of coating with magnetic layer, disc carrier manufacturing, coating coating by sputtering method, etc., can solve the problems of poor particle orientation effect, unsuitable for industrial production, and high difficulty in preparation, and achieve The effect of small size dispersion, promotion of orientation growth and uniform distribution
Inactive Publication Date: 2012-05-30
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Among them, PMR and HAMR technologies are becoming mature and have been widely used in the field of magnetic recording hard disks. However, these two methods have their own defects: PMR cannot avoid noise in the transition zone, and each storage unit is required to be composed of dozens of particles. The storage unit cannot continue to be smaller; HAMR puts forward higher requirements on the heat resistance and thermal conductivity of the device and the fineness of the heat-assisted light source
It is a pity that the former is not suitable for industrial production, while the particle orientation obtained by the latter is very poor
However, so far, there is no simple and effective way to solve the problem of c-axis vertical orientation growth of ordered FePt nanoparticles.
[0003] This patent proposes a brand new growth process, through the role of the orientation induction layer [Au(002)], it can solve the problem of L1 0 The c-axis vertical orientation of the ordered array of FePt nanoparticles is difficult to prepare, and it provides a new method for the realization of the next generation of ultra-high-density magnetic storage media, namely BPM
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0033] According to the method for preparing c-axis vertically oriented BPM described in the specific embodiment, the method will be described below in conjunction with specific examples:
[0034] 1) Place the cleaned and dried MgO(100) single crystal substrate in the magnetron sputtering chamber, and sputter a layer of Pt(002) film with a thickness of 2nm. The sputtering conditions used are: the target distance is 7cm, and the working environment is 0.4Pa under Ar atmosphere, the sputtering temperature is 400°C, and the working power of radio frequency magnetron sputtering is 5W;
[0035] 2) Then sputter a layer of 40nm thick Au(002) film on it, the sputtering conditions used are: the target distance is 7cm, the working environment is 0.4Pa under Ar atmosphere, the sputtering temperature is 400°C, radio frequency magnetron The working power of sputtering is 5W;
[0036] 3) Add the amphiphilic block copolymer PS(1762)-P4VP(308) into toluene and stir thoroughly, the concentratio...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to view more
Abstract
The invention provides a method for preparing a c-axle vertical alignment patterned magnetic recoding medium. The method comprises the following steps: 1, sputtering a buffer layer on a substrate; 2, sputtering an alignment-induced layer on the buffer layer; 3, assembling a magnetic nano-particle array on the alignment-induced layer by a dip-coating or spin-coating method; 4, sputtering a cover layer on the magnetic nano-particle array to form a support base; and 5, annealing the wafer to complete the preparation of the magnetic recording medium.
Description
Technical field: [0001] The invention belongs to the technical field of magnetic recording, and relates to a method for preparing a patterned magnetic recording medium with c-axis vertical orientation. Background technique: [0002] Due to the superparamagnetic effect of magnetic recording media, the traditional horizontal magnetic recording method has reached the theoretical limit. In order to achieve the goal of ultra-high-density magnetic storage, various recording schemes are being explored, including perpendicular magnetic recording (Perpendicular magnetic recording, PMR), heat assisted magnetic recording (Heat Assisted Magnetic Recording, HAMR) and patterned media (Bit- Patterned Media, BPM) is considered to be the three directions with the most development potential. Among them, PMR and HAMR technologies are becoming mature and have been widely used in the field of magnetic recording hard disks. However, these two methods have their own defects: PMR cannot avoid nois...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Application Information
Patent Timeline
Login to view more Patent Type & Authority Patents(China)
IPC IPC(8): G11B5/851
Inventor 高云张兴旺尹志岗屈盛高红丽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Try Eureka
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap