Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal nanoparticles and preparation method thereof, qled device

A technology of metal nanoparticles and seeds, applied in metal processing equipment, nanotechnology, electrical solid devices, etc., can solve the problems of poor surface passivation effect and stability, uneven particle size distribution, etc., and achieve good surface passivation effect and stability, the effect of uniform particle size distribution

Active Publication Date: 2020-01-03
TCL CORPORATION
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a metal nanoparticle and its preparation method, aiming to solve the problems of uneven particle size distribution, surface passivation effect and poor stability of the metal nanoparticle prepared by the existing method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal nanoparticles and preparation method thereof, qled device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0017] The embodiment of the present invention provides a method for preparing metal nanoparticles, comprising the following steps:

[0018] S01. Provide metal nanoparticle seeds, configured as a metal nanoparticle seed solution;

[0019] S02. After dispersing the metal nanoparticle seed solution, add mercaptan for mixing reaction, then use extractant to centrifuge from the mixed solution to obtain metal nanoparticle seeds containing thiol ligands, and form thiol-containing Ligand metal nanoparticles seed solution;

[0020] S03. Add halide quaternary ammonium salts and trihaloacetic acid to the metal nanoparticle seed solution containing thiol ligands, stir and react under an inert atmosphere, add a quencher after the reaction, and obtain halogen-passivated metal nanoparticles particles.

[0021] Specifically, in the above step S01, the source of the metal nanoparticle seeds is not clearly defined, and can be purchased or obtained through preparation. In the embodiment of t...

Embodiment 1

[0042] A halogen-passivated gold nanoparticle made by the following steps:

[0043] S11. Preparation of gold nanoparticles seeds: get 0.5ml of sodium hydroxide solution (containing 0.2mmol NaOH) and 0.3ml of tetrakis hydroxymethyl phosphorus chloride solution {(HOCH 2 ) 4 PCl} (purity grade: HPLC) was fully mixed, and then the mixed solution was diluted to 1.2ml to obtain an aqueous solution with a mass fraction of hydroxymethylphosphorus chloride of 80wt%, fully stirred for 10min, and the mass fraction of 0.6ml was 1wt%. Hypochloroauric acid (HAuCl 4 ) was added dropwise to the above mixture at a certain rate with stirring, and then stirred for 15 minutes to obtain gold nanoparticles. Finally, solid gold nanoparticles were obtained by high-speed centrifugation and then separated by size selection. Gold nanoparticle seeds with smaller size are produced, and finally dispersed in ethanol to prepare a 15-20 mg / ml solution and stored in the dark and low temperature for later use...

Embodiment 2

[0049] A QLED device prepared by the following method:

[0050] After filtering the PEDPOT:PSS (AI4083) solution with a 0.45 micron filter head, spin-coat the cleaned ITO glass sheet at a speed of 4000rpm for 60s, and then anneal at 150°C for 15min; Hole transport layer and electron blocking layer (wherein electron blocking layer is made by PVK chlorobenzene solution, and the concentration of PVK chlorobenzene solution is 6mg / ml), then the gold nanoparticle solution of the chlorine atom passivation that embodiment 1 is prepared In the glove box, the spin-coating deposition was carried out at a speed of 2000rpm for 60s, and then the quantum dot luminescent layer was spin-coated at a speed of 1000rpm for 30s, and finally in a high vacuum 2x10 4 Under Pa pressure, 40nm-thick TPBI and 150nm-thick aluminum electrodes are deposited by thermal evaporation through a mask, and the area of ​​the prepared QLED device is 4cm 2 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
concentrationaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing metal nanoparticles, comprising the following steps: providing metal nanoparticles seeds, configured as metal nanoparticles seed solution; after dispersing the metal nanoparticles seed solution, adding mercaptan and stirring for 1- 3 hours, and then use the extractant to centrifuge from the mixed solution to obtain metal nanoparticle seeds containing thiol ligands, and form a metal nanoparticle seed solution containing thiol ligands after dispersion treatment; Adding halide quaternary ammonium salt and trihaloacetic acid to the seed solution of metal nanoparticles, stirring and reacting in an inert atmosphere, adding a quencher after the reaction, to obtain halogen-passivated metal nanoparticles.

Description

technical field [0001] The invention belongs to the technical field of quantum dot synthesis, and in particular relates to a metal nanoparticle, a preparation method thereof, and a QLED device. Background technique [0002] Due to their unique optical, electrical, magnetic, and crystalline properties, metal nanoparticles have important applications in the field of nanocrystals, such as the use of metal silver nanoparticles for sterilization, the use of gold nanoparticles in electrical devices to improve the performance of devices, and the use of silver nanoparticles wire to make electrodes of photovoltaic devices, etc. However, due to the size effect of metal nanoparticles, size differences will cause differences in photoelectric properties, which in turn lead to different uses of metal nanoparticles of different sizes. Especially for gold nanoparticles, in the range of nanoscale, due to the separation of their valence band and conduction band, the corresponding band gap wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B22F1/00H01L51/50H01L51/54B82Y40/00
CPCB82Y40/00B22F1/145H10K50/00H10K2102/00H10K2102/331
Inventor 程陆玲杨一行
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products