Method for preparing c-axle vertical alignment patterned magnetic recording medium

A magnetic recording medium, vertical orientation technology, applied in the direction of coating with magnetic layer, manufacture of record carrier, coating by sputtering method, etc., can solve the problems of unsuitability for industrial production, high preparation difficulty, poor particle orientation effect, etc. Achieve the effect of small size dispersion, promotion of oriented growth and good thermal stability

Inactive Publication Date: 2011-06-15
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, PMR and HAMR technologies are becoming mature and have been widely used in the field of magnetic recording hard disks. However, these two methods have their own defects: PMR cannot avoid noise in the transition zone, and each storage unit is required to be composed of dozens of particles. The storage unit cannot continue to be smaller; HAMR puts forward higher requirements on the heat resistance and thermal conductivity of the device and the fineness of the heat-assisted light source
It is a pity that the former is not suitable for industrial production, while th

Method used

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  • Method for preparing c-axle vertical alignment patterned magnetic recording medium
  • Method for preparing c-axle vertical alignment patterned magnetic recording medium
  • Method for preparing c-axle vertical alignment patterned magnetic recording medium

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Embodiment

[0033] According to the method for preparing the c-axis vertical orientation BPM described in the specific embodiment, the method is described below in conjunction with specific embodiments:

[0034] 1) Put the cleaned and dried MgO(100) single crystal substrate in the magnetron sputtering chamber, and sputter a layer of 2nm thick Pt(002) film. The sputtering conditions used are: the target spacing is 7cm, the working environment is 0.4Pa in Ar atmosphere, sputtering temperature 400℃, working power of RF magnetron sputtering 5W;

[0035] 2) Sputter a 40nm thick Au(002) film on it. The sputtering conditions used are: the target spacing is 7cm, the working environment is 0.4Pa in Ar atmosphere, the sputtering temperature is 400℃, and the RF magnetron The working power of sputtering is 5W;

[0036] 3) The amphiphilic block copolymer PS(1762)-P4VP(308) is added to toluene and fully stirred. The concentration of the amphiphilic block copolymer in toluene is about 0.5wt%, and the time for...

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Abstract

The invention provides a method for preparing a c-axle vertical alignment patterned magnetic recoding medium. The method comprises the following steps: 1, sputtering a buffer layer on a substrate; 2, sputtering an alignment-induced layer on the buffer layer; 3, assembling a magnetic nano-particle array on the alignment-induced layer by a dip-coating or spin-coating method; 4, sputtering a cover layer on the magnetic nano-particle array to form a support base; and 5, annealing the wafer to complete the preparation of the magnetic recording medium.

Description

Technical field: [0001] The invention belongs to the field of magnetic recording technology, and relates to a method for preparing a patterned magnetic recording medium with a c-axis vertical orientation. Background technique: [0002] Due to the superparamagnetic effect of the magnetic recording medium, the traditional horizontal magnetic recording method has reached the theoretical limit. In order to achieve the goal of ultra-high density magnetic storage, various recording solutions are being explored, including perpendicular magnetic recording (PMR), Heat Assisted Magnetic Recording (HAMR) and patterned media (Bit- Patterned Media (BPM) is considered to be the three most promising directions. Among them, PMR and HAMR technologies are becoming mature and have been widely used in the field of magnetic recording hard disks. However, these two methods have their own shortcomings: PMR cannot avoid noise in the transition zone, and requires each storage unit to be composed of doze...

Claims

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Application Information

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IPC IPC(8): G11B5/851
Inventor 高云张兴旺尹志岗屈盛高红丽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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