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Compound semiconductor device and production method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effect of preventing leakage current

Active Publication Date: 2013-03-13
SANKEN ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And, due to the generation of this electric field, leakage current easily flows from the drain electrode to the source electrode via the silicon substrate.
Also, when a buffer layer is formed between the silicon substrate and the semiconductor layer containing a nitrogen compound, similarly, leakage current tends to flow from the drain electrode to the source electrode via the buffer layer.

Method used

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  • Compound semiconductor device and production method thereof
  • Compound semiconductor device and production method thereof
  • Compound semiconductor device and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] In Embodiment 1 of the present invention, an example in which the present invention is applied to a nitride-based compound semiconductor device in which the compound semiconductor element is a HEMT will be described.

[0033] [Structure of Nitride Compound Semiconductor Device]

[0034] Such as Figure 1 ~ Figure 3 As shown, the nitride-based compound semiconductor device 1 of Example 1 has: a first compound semiconductor layer 31 having a two-dimensional carrier gas channel 310 and serving as a carrier transport layer; a second compound semiconductor layer 32 , which is arranged on the first compound semiconductor layer 31, and functions as a carrier supply layer (barrier region); the compound semiconductor element 10 and the peripheral region 11, the compound semiconductor element 10 has: a first electrode 61, which is arranged on two on the two-dimensional carrier gas channel 310; and the second electrode 42, which is arranged separately from the first electrode 61 ...

Embodiment 2

[0075] In Example 2 of the present invention, an example in which the present invention is applied to a nitride-based compound semiconductor device in which the compound semiconductor element is a Schottky barrier diode (SBD) will be described.

[0076] [Structure of Nitride Compound Semiconductor Device]

[0077] Such as Figure 8 As shown, the nitride-based compound semiconductor device 1 of Example 2 has: a first compound semiconductor layer 31 having a two-dimensional carrier gas channel 310 and serving as a carrier transport layer; a second compound semiconductor layer 32 , which is arranged on the first compound semiconductor layer 31 and functions as a carrier supply layer (barrier region); the compound semiconductor element 10 and the peripheral region 11, the compound semiconductor element 10 has: the first electrode 61 and the second electrode 42 , which are arranged in regions separated from each other on the two-dimensional carrier gas channel 310, the outer perip...

Embodiment 3

[0084] In Embodiment 3 of the present invention, a modified example of the nitride-based compound semiconductor device 1 of Embodiment 2 will be described.

[0085] [Structure of Nitride Compound Semiconductor Device]

[0086] Such as Figure 9 As shown, the nitride-based compound semiconductor device 1 of Example 3 basically has the same structure as that of the nitride-based compound semiconductor device 1 of Example 2, but the first electrode 61 of the compound semiconductor element 10, that is, the anode electrode is formed by The configuration is the same as that of the peripheral electrode 62 in the peripheral region 11 . as stated image 3 As shown, the first electrode 61 includes at least a first electrode layer 601 whose conductivity type (p-type) is opposite to that of the two-dimensional carrier gas channel 310 (n-type).

[0087] In addition, in Example 3, the first electrode 61 is arranged in the first groove 323 , but the first groove 323 may not be provided. ...

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PUM

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Abstract

A compound semiconductor device is comprised of: a compound semiconductor layer including a first active layer and a second active layer forming a hetero junction with the first active layer so as to naturally generate a two-dimensional carrier gas channel in the first active layer along the hetero junction; a first electrode formed on the second active layer; a second electrode in ohmic contact with the first active layer and isolated from the first electrode; and a channel modifier for locally changing a part of the first active layer under the channel modifier into a normally-off state, the channel modifier being formed on the second active layer so as to enclose but be isolated from the first electrode and the second electrode.

Description

technical field [0001] The present invention relates to a compound semiconductor device and a manufacturing method thereof, and more particularly to a nitride-based compound semiconductor device including a compound semiconductor element having a high-mobility carrier transport layer and a manufacturing method thereof. Background technique [0002] A high electron mobility transistor (HEMT: high electron mobility transistor) is known as a nitride-based compound semiconductor device using a gallium nitride (GaN)-based compound semiconductor. In particular, n-channel conductivity type HEMTs have high electron (carrier) mobility and are excellent in high-frequency characteristics. [0003] The HEMT is composed of a nitride-based semiconductor functional layer, which has a gallium nitride (GaN) layer functioning as a carrier transport layer (carrier channel layer) stacked on the layer through a heterojunction. On the GaN layer is an aluminum gallium nitride (AlGaN) layer functi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/06H01L29/41H01L21/335
CPCH01L29/2003H01L29/7786H01L29/66462H01L29/475
Inventor 金子信男
Owner SANKEN ELECTRIC CO LTD