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Method and device for improving internal quantum efficiency of third group nitride-based luminous device

A technology for internal quantum efficiency and light-emitting devices, which is applied in electrical components, circuits, semiconductor devices, etc., and can solve problems such as defects and poor device yield.

Inactive Publication Date: 2011-06-15
WALSIN LIHWA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, cracks are generated in the light-emitting device or other device forming regions, making the device a defective product, and thus the yield of the device is not good

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  • Method and device for improving internal quantum efficiency of third group nitride-based luminous device
  • Method and device for improving internal quantum efficiency of third group nitride-based luminous device
  • Method and device for improving internal quantum efficiency of third group nitride-based luminous device

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the examples. It should be understood that these examples are only for the purpose of illustration, and in no way limit the protection scope of the present invention.

[0028] Please refer to figure 1 . figure 1 A flow chart of the best embodiment of the method for improving the internal quantum efficiency of the Group III nitride-based light-emitting device of the present invention is shown. In this embodiment, the Group III nitride-based light-emitting device refers to a gallium nitride (GaN) light-emitting diode. The method for improving the internal quantum efficiency of a Group III nitride-based light-emitting device of the present invention includes the following steps: First, provide a gallium nitride (GaN) substrate, preferably a GaN substrate with a single crystal structure formed on a flat surface, such as step S101. The formation of GaN substrate can be divided into three stages: nucl...

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Abstract

The invention discloses a method for improving internal quantum efficiency of a third group nitride-based luminous device. The method comprises the following steps of: providing a third group nitride-based substrate with a single crystal structure; forming a particle oxide layer with a plurality of unabsorbed visible lights on the third group nitride-based substrate, wherein the size, shape and density of particles are controlled by the reaction temperature, reaction time and reaction concentration; and generating a third group nitride base layer on the oxide layer. The oxide layer blocks the thread dislocation of the third group nitride-based substrate from being propagated to the third group nitride base layer so as to improve the internal quantum efficiency of the third group nitride-based luminous device. The invention also discloses a device for improving the internal quantum efficiency of the third group nitride-based luminous device.

Description

technical field [0001] The present invention relates to a method for improving the internal quantum efficiency of a light-emitting device, in particular to a group III nitride-based light-emitting device, such as a gallium nitride (GaN) light-emitting device. Background technique [0002] Group III nitride-based semiconductors are direct-transition semiconductors. When used in light-emitting devices such as light-emitting diodes (Light emitting Diodes, LEDs) and laser diodes (Laser-Diodes, LDs), they have properties ranging from UV to Emission spectrum of red light broad band. [0003] When the light-emitting device has a higher external quantum efficiency (the number of extracted photons / the number of injected carriers), its power consumption is less. The external quantum efficiency can be improved by increasing the light extraction efficiency (the number of extracted photons / the number of emitted photons) or the internal quantum efficiency (the number of emitted photons / t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12
Inventor 潘昌吉张简庆华陈彰和
Owner WALSIN LIHWA