3D semiconductor device

Abstract

Provided are a three-dimensional semiconductor device and a method of fabricating the same. The three-dimensional semiconductor device may include a mold structure for providing gap regions and an interconnection structure including a plurality of interconnection patterns disposed in the gap regions. The mold structure may include interlayer molds defining upper surfaces and lower surfaces of the interconnection patterns and sidewall molds defining sidewalls of the interconnection patterns below the interlayer molds.

Description

technical field [0001] The disclosure herein relates to a method of manufacturing a three-dimensional semiconductor device and a three-dimensional semiconductor memory. Background technique [0002] In order to meet consumer demand for excellent performance and low price, highly integrated semiconductor devices may be required. In the case of semiconductor memories, an increased level of integration is particularly desired because their level of integration can be an important factor in determining product prices. In the case of conventional two-dimensional or planar semiconductor memories, since their degree of integration can be mainly determined by the area occupied by a unit memory cell, the degree of integration is significantly affected by the level of fine pattern formation technology. However, since increasing the pattern fineness would require extremely expensive equipment, the integration level of the two-dimensional semiconductor memory is increased but still lim...

AI Technical Summary

Problems solved by technology

However, since increasing pattern fineness would require extremely expensive equipment, the integration level of two-dimensional semiconductor memory is increased but still limited

Images