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Method for forming self-aligning metal silicide

A metal silicide, self-aligned technology, applied in electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., to reduce particle pollution and improve yield

Inactive Publication Date: 2011-07-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The problem solved by the present invention is to reduce metal silicide particle pollution

Method used

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  • Method for forming self-aligning metal silicide
  • Method for forming self-aligning metal silicide
  • Method for forming self-aligning metal silicide

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Embodiment Construction

[0025] It can be seen from the background technology that the metal silicide formed by the existing process usually has particle pollution on the surface, which leads to a decrease in device yield. Therefore, the inventors of the present invention have found that the above-mentioned particle pollution is mainly in the metal layer deposition process In the method, the edge region of the semiconductor substrate where the metal layer is deposited is rough, with many faults and burrs. During the process of depositing the metal layer, the metal ions deposited on the edge of the semiconductor substrate are easy to fall off, forming particle pollution.

[0026] For this reason, the inventor of the present invention proposes a method for forming an optimized salicide, comprising:

[0027] providing a semiconductor substrate, the surface of the semiconductor substrate has at least one silicon region;

[0028] Treating the edge region of the semiconductor substrate with plasma;

[0029...

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Abstract

The invention relates to a method for forming self-aligning metal silicide, which comprises the following steps of: providing a semiconductor substrate, wherein at least one silicon region is arranged on the surface of the semiconductor substrate; processing the edge region of the semiconductor substrate by utilizing a plasma; removing a natural oxide layer of the silicon region; forming a metal layer in the silicon region; forming a protective layer on the metal layer surface; and annealing the semiconductor substrate provided with the metal layer to form a metal silicide layer. The method for forming the self-aligning metal silicide can reduce particle pollution and improve the forming quality and yield of the self-aligning metal silicide.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a self-aligned metal silicide. Background technique [0002] In semiconductor manufacturing technology, metal silicide is widely used in source / drain contacts and gate contacts to reduce contact resistance due to its low resistivity and good adhesion with other materials. Metal with high melting point reacts with silicon to form metal silicide, and a low-resistivity metal silicide can be formed through one-step or multi-step annealing process. With the improvement of the semiconductor process level, especially at the technology node of 90nm and below, in order to obtain lower contact resistance, nickel and nickel alloys have become the main materials for forming metal silicides. [0003] A method for forming a salicide is disclosed in the published Chinese patent application No. 200780015617.9, in which nickel alloy is selected as the material for ...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/3065H01L21/336
Inventor 徐友锋宁超保罗
Owner SEMICON MFG INT (SHANGHAI) CORP
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