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Preparation method of nanowire array with Si/NiSi nuclear shell structure

A nanowire array and silicon nanowire array technology are applied in the field of preparation of Si/NiSi core-shell structure nanowire arrays, which can solve the problems of limiting the processing technology of Si nanowire devices, and achieve the effect of huge application value.

Inactive Publication Date: 2011-07-20
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Certain transition metal silicides such as TiSi 2 and CoSi 2 , their nucleation requires a high temperature, which limits the processing technology of Si nanowire devices (H.Jeon, C.A.Sukow, J.W.Honeycutt, G.A.Rozgonyi, R.J.Nemanich, J.Appl.Phys., 1992,71,4269 -4276.)

Method used

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  • Preparation method of nanowire array with Si/NiSi nuclear shell structure
  • Preparation method of nanowire array with Si/NiSi nuclear shell structure
  • Preparation method of nanowire array with Si/NiSi nuclear shell structure

Examples

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Embodiment 1

[0018] 1) Soak the monocrystalline silicon substrate cleaned with hydrofluoric acid in a mixed aqueous solution of silver nitrate and hydrofluoric acid for 3 minutes; wherein, the concentration of silver nitrate in the mixed aqueous solution of silver nitrate and hydrofluoric acid is 5 mmol / L, the concentration of hydrofluoric acid is 4.8mol / L; the monocrystalline silicon substrate immersed in the mixed aqueous solution of silver nitrate and hydrofluoric acid is etched in the etching aqueous solution mixed with hydrogen peroxide and hydrofluoric acid, wherein, The concentration of hydrogen peroxide in the etching solution mixed with hydrogen peroxide and hydrofluoric acid is 4mmol / L, and the concentration of hydrofluoric acid is 4.8mol / L; etching is performed in a water bath, the temperature of the water bath is 50°C, and the etching time is 15 minutes , where silver ions are deposited on the surface of the single crystal silicon substrate, Si will be etched down, and where no...

Embodiment 2

[0022] 1) Soak the monocrystalline silicon substrate cleaned with hydrofluoric acid in a mixed aqueous solution of silver nitrate and hydrofluoric acid for 3 minutes; wherein, the concentration of silver nitrate in the mixed aqueous solution of silver nitrate and hydrofluoric acid is 5 mmol / L, the concentration of hydrofluoric acid is 4.8mol / L; the monocrystalline silicon substrate immersed in the mixed aqueous solution of silver nitrate and hydrofluoric acid is etched in the etching aqueous solution mixed with hydrogen peroxide and hydrofluoric acid, wherein, The concentration of hydrogen peroxide in the etching solution mixed with hydrogen peroxide and hydrofluoric acid is 4mmol / L, and the concentration of hydrofluoric acid is 4.8mol / L; etching is performed in a water bath, the temperature of the water bath is 50°C, and the etching time is 30 minutes , where silver ions are deposited on the surface of the single crystal silicon substrate, Si will be etched down, and where no...

Embodiment 3

[0026] 1) Soak the monocrystalline silicon substrate cleaned with hydrofluoric acid in a mixed aqueous solution of silver nitrate and hydrofluoric acid for 3 minutes; wherein, the concentration of silver nitrate in the mixed aqueous solution of silver nitrate and hydrofluoric acid is 5 mmol / L, the concentration of hydrofluoric acid is 4.8mol / L; the monocrystalline silicon substrate immersed in the mixed aqueous solution of silver nitrate and hydrofluoric acid is etched in the etching aqueous solution mixed with hydrogen peroxide and hydrofluoric acid, wherein, The concentration of hydrogen peroxide in the etching solution mixed with hydrogen peroxide and hydrofluoric acid is 4mmol / L, and the concentration of hydrofluoric acid is 4.8mol / L; etching is performed in a water bath, the temperature of the water bath is 50°C, and the etching time is 30 minutes , where silver ions are deposited on the surface of the single crystal silicon substrate, Si will be etched down, and where no...

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Abstract

The invention relates to a preparation method of a nanowire array with a Si / NiSi nuclear shell structure, belonging to the technical field of preparation of semiconductor nanowire arrays. The preparation method comprises the following steps of: placing a monocrystal silicon substrate with vertically oriented silicon nanowire arrays etched on the surface in a NiCl2 solution for soaking, and taking out for airing; then placing the aired monocrystal silicon substrate into an aluminum oxide porcelain boat and placing into the center of a tube furnace for heating; in the heating process, introducing inert gases as shielding gases; and finally, obtaining the nanowire array with the Si / NiSi nuclear shell structure on the monocrystal silicon substrate. The preparation method provided by the invention is simple and feasible, and the prepared nanowire array with the Si / NiSi nuclear shell structure has extremely low resistivity and has huge potential application value in the field based on Si nanowire devices.

Description

technical field [0001] The invention belongs to the technical field of preparation of semiconductor nanowire arrays, in particular to a preparation method of Si / NiSi core-shell structure nanowire arrays. Background technique [0002] The applications of Si nanowires in various fields such as integrated electronic devices, chemical and biological sensors, and energy sources have attracted great attention. In order to make these devices reach optimal performance, it is very important to form a reliable contact with these devices (Y.Wu, J.Xiang, C.Yang, W.Lu, C.M.Lieber, Nature, 2004, 430, 61-65.). To this end, various transition metal silicides have been used to form contacts with Si with low resistivity and few interfacial defects. Therefore, it is very important to prepare suitable nanoscale transition metal silicides to form contacts with Si nanowires. Certain transition metal silicides such as TiSi 2 and CoSi 2 , their nucleation requires a high temperature, which lim...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/00H01L21/00
Inventor 师文生刘海龙佘广为
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI