Method for testing inductance

Abstract

The invention discloses a method for testing inductance. A wafer comprises an inductor arranged on the wafer and an external lead wire connected with the inductor, and the external lead wire comprises a first lead wire for making the inductor grounded, a second lead wire and a third lead wire which are used for making the two ends of the inductor respectively connected with corresponding bonding pads. The method comprises the following steps of: measuring a first parameter containing the inductor and the external lead wire; removing the inductor to obtain an open circuit structure containing the external lead wire; measuring a second parameter of the open circuit structure; mutually connecting the external lead wire of the open circuit structure to form a short circuit structure; measuring a third parameter of the short circuit structure; acquiring a fourth parameter for expressing an inductance value by deducting the second parameter and the third parameter from the first parameter. By the method, the inductance value of a tested inductor is more accurate and the error range is 2 percent.

Description

Technical field [0001] The invention relates to the field of microelectronics technology, and in particular to a method for testing three-terminal differential inductance. Background technique [0002] In integrated circuits, active devices are certainly very important, but they also include large-area passive devices, including on-chip transmission lines and on-chip inductors. In general wireless products, inductive components only account for less than 10% of the total number of components, but they have a very important impact on the overall radio frequency performance. Therefore, the design and analysis of inductors on these passive components have also been extensively studied. Due to the formation of large-scale integrated circuits, spiral inductors are widely used in voltage controlled oscillators, low noise amplifiers, power amplifiers, mixers and impedance matching circuits. Since an inductor is an energy storage element, the change in the inductance value of the spira...

AI Technical Summary

Problems solved by technology

Since the first scattering parameter S 1 The scattering parameters including the inductance value of the inductor, the scattering parameters corresponding to the parasitic inductance, parasitic resistance and parasitic capacitance on the pad and the lead, and the second scattering parameter S 2 Only the scattering parameters corresponding to the parasitic capacitance on the pad and lead are included, but the parasitic inductance and parasitic resistance on the pad and lead cannot be eliminated

In addition, if a wire material is used to connect the first lead 101 and the second lead 102 to form a chip with a short circuit structure, measure the relevant parameters of the chip with the short circuit structure, and compare it with the above parameter Y 1 , Y 2 When performing calculations to obtain the relevant characteristics of the inductor 104, it will lead to more calculations of the increased parasitic inductance and parasitic resistance on the conductive material, and will also cause a large error between the measured inductance value of the inductor 104 and the simulated inductance value. The error range is about 10%, which makes it impossible to establish a better inductor model for circuit designers to use, and then cannot obtain accurate inductance values ​​based on the inductor model. Does not meet actual needs

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