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Method for preparing lower electrode of metal-insulator-metal semiconductor device

A metal-semiconductor and insulator technology, used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as reduction, and achieve the effects of increasing breakdown voltage, reducing temperature, and avoiding bumps

Active Publication Date: 2011-08-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The protrusion 11 on the surface of the metal electrode extends into the insulator, thereby reducing the breakdown voltage (Breakdown Voltage, BV) of the metal-insulator-metal semiconductor device

Method used

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  • Method for preparing lower electrode of metal-insulator-metal semiconductor device
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  • Method for preparing lower electrode of metal-insulator-metal semiconductor device

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Embodiment Construction

[0022] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings.

[0023] See image 3 , image 3 It is a flowchart of the method for preparing the bottom electrode of the metal-insulator-metal semiconductor device of the present invention. Preferably, the metal-insulator-metal semiconductor device is an Integrated Passive Device (IPD), and more preferably, the metal-insulator-metal semiconductor device is a metal-insulator-metal capacitor. The method for preparing the lower electrode of the metal-insulator-metal semiconductor device of the present invention includes the following steps:

[0024] A semiconductor substrate is provided, and an insulating dielectric layer is formed on the surface of the semiconductor substrate. Preferably, the insulating dielectric layer is a silicon dioxide layer. The semiconductor substrate is a s...

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Abstract

The invention relates to a method for preparing a lower electrode of a metal-insulator-metal semiconductor device, comprising the following steps of: providing a semiconductor substrate to form an insulation dielectric layer on the surface of the semiconductor substrate; forming a titanium liner on the surface of the insulation dielectric layer; forming a first titanium nitride layer on the surface of the titanium liner; forming a metal layer on the surface of the first titanium nitride layer by multiple steps; and forming a second titanium nitride layer on the surface of the metal layer. The preparation method disclosed by the invention is beneficial to reducing a breakdown voltage of the metal-insulator-metal semiconductor device.

Description

Technical field [0001] The invention relates to a method for preparing a lower electrode of a metal-insulator-metal semiconductor device, in particular to a method for preparing a lower electrode of a metal-insulator-metal capacitor. Background technique [0002] With the development of very large scale integrated circuits, in order to create devices with increased cell area in accordance with the scaling ratio of Moore’s Law, while ensuring the high level of performance (leakage, breakdown or voltage linearity) required by various applications, metal-insulators -Metal devices have become an important component, especially metal-insulator-metal capacitors are a key component. Metal-insulator-metal capacitors are usually a sandwich structure in which the upper metal electrode and the lower metal electrode are separated by a thin insulating layer. [0003] In the prior art, the lower metal electrode is formed on the surface of a semiconductor substrate with an insulating dielectric ...

Claims

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Application Information

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IPC IPC(8): H01L21/02
Inventor 赵波刘玮荪
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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