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Quantum dot optical devices with enhanced gain and sensitivity and methods of making same

A photosensitive layer and image sensor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as poor resolution, low yield, low gain and sensitivity, and achieve high detection sensitivity.

Active Publication Date: 2011-08-17
INVISAGE TECHNOLOGIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This non-monolithic process then necessitates complex assembly procedures, resulting in low yields, poor resolution (e.g., low-cost commercial silicon cameras have at least 10 times the number of pixels), and high cost (e.g., silicon cameras are at least 100 times)
[0012] SWIR light detection and imaging can also be achieved using quantum dots as photosensitive materials; however, imaging systems using quantum dots typically have relatively low gain and sensitivity

Method used

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  • Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
  • Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
  • Quantum dot optical devices with enhanced gain and sensitivity and methods of making same

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Embodiment

[0124] A typical photoconductive detector was fabricated using single-layer PbS QD nanocrystals fabricated by direct spin-coating from chloroform solution on an interdigitated electrode array. The device structure is as Figure 7A shown, and similar to Figure 4B basic device. Parallel gold electrodes are supported by a glass substrate and have height, width and spacing of 100 nm, 3 mm and 5 μm, respectively. The thickness of the QD layer was controlled by the concentration of the chloroform-QD solution and the spin-coating parameters. In studies performed by the inventors, the thickness ranged from 100 nm up to 500 nm.

[0125] The treatment of the QD surface is very important to determine the performance of photodetectors. Devices fabricated directly from oleate-coated QDs synthesized via an organometallic route did not show any measurable conductance because the 2 nm-long oleate ligand inhibited carrier transport in the QDs. A post-synthesis ligand exchange was therefo...

Embodiment approach

[0151] Although the QDs are solution deposited in the described embodiments, the QDs can be deposited by other methods. As mentioned above, one motivation for using solution deposition is ease of compatibility with existing CMOS processes. However, satisfactory devices can be fabricated by vacuum deposition or otherwise depositing QDs.

[0152] Other embodiments are described in the following items:

[0153] 1. A device comprising:

[0154] an integrated circuit having an array of conductive regions; and

[0155] A photosensitive material on at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions.

[0156] 2. The device of item 1, wherein said photosensitive layer comprises an array of islands of photosensitive material, wherein a plurality of said islands covers a corresponding plurality of said conductive regions.

[0157] 3. The device of item 1, wherein the integrated circuit in...

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Abstract

The invention relates to quantum dot optical devices with enhanced gain and sensitivity and methods of making same. The quantum dot relates to an image sensor and comprises a read-out integrated circuit communicative with first and second pixel electrodes and a substantially continuous optical sensitive layer which contacts with the first and second pixel electrodes.

Description

[0001] This application is a divisional application of the Chinese invention patent application with the application number 200680036992.7 and the title of the invention "quantum dot optical device with enhanced gain and sensitivity and its manufacturing method". [0002] Cross References to Related Applications [0003] This application claims the benefit under 35 U.S.C. §119(e) of U.S. Provisional Application Serial No. 60 / 710,944, filed August 25, 2005, entitled "Method for Increasing Gain and Sensitivity from Spin-Cast Colloidal Quantum Dot Photodetectors" , the entire content of which application is incorporated herein by reference. This application is also a continuation-in-part of U.S. Application Serial No. 11 / 327,655, filed January 9, 2006, which claims priority to U.S. Provisional Application Serial No. 60 / 641,766, filed January 7, 2005, both by Incorporated herein by reference. [0004] This application is also related to the following applications, the entire conte...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L31/0352H01L27/146H01L21/02422H01L21/02521H01L21/02628H01L27/14634H01L21/02601
Inventor 爱德华·萨金特贾森·克利福德耶拉西莫斯·康斯坦塔托斯伊恩·霍华德伊桑·J·D·克莱姆拉里莎·勒维纳
Owner INVISAGE TECHNOLOGIES