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Photovoltaic interconnector for absorbing stress

An interconnection strip and photovoltaic technology, which is applied in photovoltaic power generation, photovoltaic modules, electrical components, etc., can solve the problems of reduced battery life and high cost of interconnection strips, and achieve the effect of reducing debris and good economic benefits.

Active Publication Date: 2011-09-28
KUNMING XIALANG TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large difference in expansion coefficient between the two, a lot of stress will be generated at the joint between the silicon wafer and the interconnection belt. At the same time, because the solar panel is exposed to the outdoors for a long time, it has to withstand infinite changes in cold and heat, which will eventually lead to welding. Seam desoldering reduces the life of the battery board
[0003] The Japanese patent invented the composite material with Invar and other materials sandwiched in the copper base material. The disadvantage is that the cost of the interconnection bar produced is relatively high.

Method used

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  • Photovoltaic interconnector for absorbing stress
  • Photovoltaic interconnector for absorbing stress
  • Photovoltaic interconnector for absorbing stress

Examples

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Embodiment 1

[0020] Such as figure 1 , 2 As shown in the interconnection strip, 1 in the figure is the base copper strip, its thickness is 0.05mm, and its width is 0.1mm, 2 is the tin alloy layer, its thickness is 0.001mm, and the composition of the tin alloy is calculated as: Cu 0.10 , Ag0.1, Si 0.001, P 0.09, and the balance is Sn. The entire interconnection strip is sinusoidal along its longitudinal direction, its wavelength λ=1mm, and its peak height H=0.005mm.

Embodiment 2

[0022] The situation of embodiment 1 is basically the same, except that the thickness of the copper strip is 0.2mm, and the width is 2.0mm, and the thickness of the tin alloy layer is 0.035mm, and the composition of the tin alloy is calculated in % by weight: Cu 2.00, Ag3.5,, Si0.006, P0.002, Pb10, the balance is Sn, its wavelength λ=10mm, and the peak height H=0.01mm. Other situations are identical with embodiment 1.

Embodiment 3

[0024] The situation of embodiment 1 is basically the same, but the thickness of the copper strip is 0.16mm, and the width is 1.6mm, and the thickness of the tin alloy layer is 0.02mm, and the composition of the tin alloy is calculated in % by weight: Cu 1.0, Ag 2, Si 0.0. .003, P0.05, Pb32, the balance is Sn, its wavelength λ=5mm, peak height H=0.007mm. Other situations are identical with embodiment 1.

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Abstract

The invention relates to a photovoltaic interconnector for absorbing stress, and particularly to an interconnector function material in a solar photovoltaic battery, belonging to the technical field of new energy resources. The interconnector comprises a base copper strip, and a tin alloy layer (2) on the surface of the copper strip. The interconnector is characterized in that the interconnector is in a ripple shape in the longitudinal direction, and the ripple shape can be sine shaped, or in a tilt arrangement, or in a tilt mirror-image arrangement or in a tilt mirror-image staggered arrangement. Since the photovoltaic interconnector with ripples has certain elasticity in the longitudinal direction, the interconnector can absorb the stress generated in a brazing process and the stress generated in the use process, thereby reducing the generation of fragments in the brazing process, prolonging the service life of a battery plate, and achieving better economic benefit. The photovoltaic interconnect ribbon provided by the invention is mainly used as a conductive function material of the solar photovoltaic battery.

Description

technical field [0001] The invention relates to the field of new energy technologies, in particular to functional materials for interconnection strips in solar photovoltaic cells. Background technique [0002] Photovoltaic panels are mainly welded together by cells and interconnecting strips to convert light energy into electrical energy through sunlight. The cells are made of silicon, and the interconnect strips consist of a copper base strip coated with a tin alloy. The interconnection strips are welded to the main grid lines of the cells. The linear expansion coefficient of silicon is 2.6×10 -6 , the linear expansion coefficient of copper is 16.5×10 -6 , the difference between the two is more than 6 times. Due to the large difference in expansion coefficient between the two, a lot of stress will be generated at the joint between the silicon wafer and the interconnection belt. At the same time, because the solar panel is exposed to the outdoors for a long time, it has ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/05H02S40/34
CPCY02E10/50
Inventor 刘雅洲李志平刘璐刘颖绚刘艳绚
Owner KUNMING XIALANG TECH CO LTD
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