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Fuse programming circuit and fuse programming method

A fuse and circuit technology, applied in the field of semiconductor devices, can solve the problems of uncertain resistance value, difficult to judge whether the electrical fuse is blown or programmed, etc., and achieves reduced thermal stress, high resistance value, and large inductive margin. Effect

Active Publication Date: 2011-11-09
TAIWAN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The magnitude of the fuse current of the electrical fuse 102 will exceed the threshold / tolerance value (Threshold) of the electrical fuse 102, so as to cause the electrical fuse 102 to be blown or programmed
However, Figure 1A The fuse-programmed circuit shown, especially after various variations in program, voltage, and temperature (PVT), often causes electrical fuses to produce variable resistance values ​​after blowing, while resistors In the case of large variation and small sensing range, it is not easy to judge whether the electric fuse has actually been blown or programmed

Method used

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  • Fuse programming circuit and fuse programming method
  • Fuse programming circuit and fuse programming method
  • Fuse programming circuit and fuse programming method

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Embodiment Construction

[0042] figure 2 The relationship between voltage and current when a fuse programming circuit receives a programming pulse with a pulse width of approximately 5μs. like figure 2 As shown, when approaching t=0 μs, a programming pulse VG will be transmitted to the gate of the NMOS transistor 106 shown in FIG. 1, and the programming pulse VG will turn on the N-type transistor 106, causing a fuse current Ifuse to flow Through the electric fuse 102. When the fuse current Ifuse passing through the e-fuse 102 increases, the drain voltage VD of the NMOS transistor 106 and the test voltage VDDQ decrease temporarily.

[0043] When approaching t=1 μs, the fuse current Ifuse almost reaches zero amps, indicating that the electrical fuse 102 has been melted or blown. After t=1 μs, since the fuse current Ifuse starts to flow back to the electrical fuse 102 , the fuse current Ifuse will gradually increase in the remaining pulse width of the programming pulse VG. The fuse current Ifuse re...

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Abstract

The invention provides a fuse programming circuit and a fuse programming method. The circuit includes an electrical fuse and a sensing and control circuit. The electrical fuse is coupled between a MOS transistor and a current source node. The sensing and control circuit is coupled to a gate of an MOS transistor and is configured to receive a programming pulse and output a modified programming signal to the gate of the MOS transistor for programming the fuse. The pulse width of the modified programming pulse is decided by a fuse current flowing through the electrical fuse. The invention benefits reduction of a heat stress on the electrical fuse so as to enable the fused electrical fuse to have a higher resistance and broader sensing range in the variation of pressure, volume and temperature.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly to the programming of electrical fuses formed in integrated circuits. Background technique [0002] Electrical fuses are often included in integrated circuits and are blown in specific modes in order to program certain integrated circuits. Figure 1A It is a well-known fuse programming circuit 100 . As shown, an electrical fuse 102 is connected between an NMOS transistor 106 and a PMOS transistor 104 . The PMOS transistor 104 has a gate coupled to a bit selection line, a source coupled to a power supply, and a drain coupled to the e-fuse 102 . The NMOS transistor 106 has a gate coupled to a word line WL, a source coupled to the e-fuse 102 , and a drain coupled to ground. [0003] The e-fuse 102 is programmed by applying a logic 0 to the gate of the PMOS transistor 104 and a programming pulse having a logic 1 to the gate of the NMOS transistor 106 . PMOS transistor 104 is t...

Claims

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Application Information

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IPC IPC(8): G11C17/16
CPCG11C17/18G11C17/16
Inventor 陈柏宏林松杰许国原黄建程
Owner TAIWAN SEMICON MFG CO LTD
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