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Semiconductor component with a trench edge termination

A semiconductor and component technology, applied in the field of power semiconductor components, can solve problems such as reducing breakdown voltage

Active Publication Date: 2011-11-16
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the semiconductor body has a rectangular form, such as is obtained by dividing a wafer into several semiconductor bodies or dies, respectively, problems related to a reduced breakdown voltage in the edge region can occur

Method used

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  • Semiconductor component with a trench edge termination
  • Semiconductor component with a trench edge termination
  • Semiconductor component with a trench edge termination

Examples

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Embodiment Construction

[0021] figure 1 and 2 A vertical semiconductor component, in particular a power semiconductor component, is schematically illustrated. The semiconductor component comprises a semiconductor body or semiconductor layer 100 having a first surface 101 and a second surface 102 arranged opposite each other and substantially parallel to each other. figure 1 A vertical cross-sectional view through the semiconductor body 100 in a section perpendicular to the first and second surfaces 101 , 102 is shown. The semiconductor body 100 also comprises an inner region 111 and an outer region or edge region 112 arranged between the inner region 111 and the edge surface 103 . The edge surface 103 extends between the first and second surfaces 101 , 102 and terminates the semiconductor body 100 in a lateral direction, whereas the first and second surfaces 101 , 102 terminate the semiconductor body 100 in a vertical direction. A "vertical direction" is a direction perpendicular to the first and ...

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Abstract

A semiconductor component with a trench edge termination includes a semiconductor body having a first surface and a second surface, and having an inner region and an edge region. The semiconductor component further includes a pn-junction between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the pn-junction extending in a lateral direction of the semiconductor body in the inner region. A first trench extends from the first side in the edge region into the semiconductor body. The trench has sidewalls that are arranged opposite to another and that are beveled relative to a horizontal direction of the semiconductor body.

Description

technical field [0001] Embodiments of the invention relate to power semiconductor components, in particular power semiconductor components having vertical edge terminations or mesa edge terminations, respectively. Background technique [0002] Power semiconductor devices such as power diodes, power MOSFETs, power IGBTs or power thyristors are designed to withstand high blocking voltages. These power devices include a pn junction formed between a p-doped semiconductor region and an n-doped semiconductor region. When the pn junction is reverse biased, the element blocks or turns off. In this case, the depletion region or space charge region propagates in the p-doped and n-doped regions. Usually, one of these semiconductor regions is more lightly doped than the other of these semiconductor regions, so that the depletion region mainly extends in the lightly doped region, and the lightly doped region mainly supports voltage across. The semiconductor region supporting the bloc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/78H01L29/739H01L29/74H01L29/861
CPCH01L29/0619H01L29/7811H01L29/1608H01L29/0661H01L29/0692H01L29/74H01L29/7396H01L29/2003H01L29/0638H01L29/0615
Inventor G.施密特
Owner INFINEON TECH AUSTRIA AG