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Condensible gas cooling system

A gas, ammonia technology, used in electrical components, semiconductor/solid-state device manufacturing, discharge tubes, etc.

Active Publication Date: 2011-11-16
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This can lead to a preference for lighter gases over heavier gases, regardless of the difference in modulation factor

Method used

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  • Condensible gas cooling system
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Experimental program
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Embodiment Construction

[0028] As mentioned above, it is necessary to maintain the temperature of the workpiece, such as a semiconductor wafer in an ion implantation process. Current techniques to maintain the temperature of the workpiece rely on transferring heat from the workpiece (eg, the platform) to the workpiece support (which physically contacts the workpiece). Some embodiments increase the heat transfer mechanism by sending "back-end gas" in the space between the workpiece and the workpiece support. These gas molecules are used to transfer heat (or a portion of the heat) from the workpiece to the workpiece support. However, as mentioned above, this heat transfer mechanism is not as effective as might be thought.

[0029] Please refer to figure 2 , which shows a cross-section of the workpiece support 210 and the workpiece 200 . The workpiece support can have two kinds of conduits. Conduit 220 directs gas 250 to the rear end of the workpiece, the space between the workpiece and the workpie...

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Abstract

A workpiece cooling system and method are disclosed. Transferring heat away from a workpiece, such as a semiconductor wafer during ion implantation, is essential. Typically this heat is transferred to the workpiece support, or platen. In one embodiment, the desired operating temperature is determined. Based on this, a gas having a vapor pressure within a desired range, such as 10-50 torr, is selected. This range is required to be sufficiently low so as to be less than the clamping force. This condensible gas is used to fill the volume between the workpiece and the workpiece support. Heat transfer occurs based on adsorption and desorption, thereby offering improved transfer properties than traditionally employed gases, such as helium, hydrogen, nitrogen, argon and air.

Description

Background technique [0001] Ion implanters are commonly used in the manufacture of semiconductor wafers. An ion source is used to generate an ion beam, and the ion beam is then directed towards the wafer. When the ions strike the wafer, they dope specific areas of the wafer. The configuration of the doped regions defines their function, and through the use of conductive interconnects, these wafers can be transformed into complex circuits. [0002] figure 1 It is a block diagram of a typical ion implanter 100 . The ion source 110 produces the desired ion species. In some embodiments, these species are atomic ions, which are best suited for high implant energies. In other embodiments, these species are molecular ions, which are better suited for low implant energies. These ions form a beam, which then passes through a source filter 120 . The source filter is preferably located near the ion source. The ions in the ion beam are accelerated / decelerated in a column 130 to a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01L21/683H01L21/687
CPCH01J2237/002H01J37/20H01J37/3171H01J2237/2001H01L21/265H01L21/324
Inventor 史帝文·R·沃特
Owner VARIAN SEMICON EQUIP ASSOC INC