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Method for cleaning object and system for cleaning object

A technology for objects and nozzles, applied in the directions of cleaning methods and utensils, cleaning methods using liquids, chemical instruments and methods, etc., which can solve problems such as treatment time limit soaking time, inability to sufficiently remove dirt, and insufficient cleaning power.

Inactive Publication Date: 2011-11-16
AQUA SCI CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, when using a cleaning device that irradiates a combination of steam and water as shown in Patent Document 1, first, due to a phenomenon that requires a certain amount of time for reaction such as penetration of water molecules, mist-like mist It is a real-time phenomenon of removing film or dirt by directly colliding with resist film or particles, so there is a problem that the treatment time is limited by the penetration time of water molecules. , or on the contrary, when the cleaning power is too strong and the object is damaged, such a problem occurs repeatedly

Method used

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  • Method for cleaning object and system for cleaning object
  • Method for cleaning object and system for cleaning object

Examples

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Effect test

example 1

[0127] Under the following conditions, a miscible fluid (in the case of using steam as the gas and in the case of using air as the gas) was irradiated on the aluminum surface for 10 minutes. image 3 The middle represents AFM pictures before and after processing. Figure 5 represents the surface roughness data. In addition, in this example, surface roughness was measured by the method of the appearance (profile) analysis attached to AFM.

[0128] Steam pressure: 0.2MPa

[0129] Steam temperature: 130°C

[0130] Pure water flow: 300cc / min

[0131] Pure water temperature: 20°C

[0132] Gap: 5mm

[0133] Nozzle Scanning: Fixed

example 2

[0135] Under the same conditions as in Example 1, the steel surface was irradiated with a miscible fluid for 10 minutes (in the case of using steam as the gas and in the case of using air as the gas). Figure 4 The middle represents AFM pictures before and after processing. Figure 6 represents the surface roughness data.

example 3

[0137] Since the steam cleaning technique disclosed in Patent Document 1 strips the resist through the chemical reaction of the steam and the mechanical action of the jet, it takes a fractional amount of time to strip the resist. In order to confirm whether this method also has the same mechanism, visualization with a high-speed camera was performed. The mixed-phase fluid was irradiated under the same conditions as in Example 1 except that the nozzle scanning speed was 100mm / sec, Figure 7 The middle shows the time-lapse of i-line positive resist peeling observed from the lower part of the quartz wafer. As shown in the figure, the resist is stripped at a very high speed while the stripped region gradually expands.

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Abstract

Disclosed is a method for cleaning an object by irradiating the object with a multiphase fluid containing a gas and liquid drops. The method is characterized in that a desired impact strength is obtained by controlling the degree of liquid-drop-impact cavitation which may be generated when the liquid drops in the multiphase fluid hit on the object.

Description

technical field [0001] The present invention relates to semiconductor substrates / glass substrates / lenses / disk components / precision machined components / molded resin components, etc. A method and system for treating a prescribed part or a prescribed surface of an object (for example, a method for cleaning an object and a system for cleaning an object), more specifically, cleaning a part or a surface, and removing useless substances located on a part or a surface or peeling, methods of grinding or processing the surface of an object, and systems thereof (for example, semiconductor manufacturing equipment such as resist stripping equipment, polymer stripping equipment, and cleaning equipment, printed circuit board cleaning equipment, and photomask cleaning equipment. etc. processing method). Background technique [0002] In the pretreatment process of semiconductors, one wafer is repeatedly cleaned 50 to 100 times. The objects of this cleaning are organic substances such as re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B05B7/04B08B3/02G03F1/08H01L21/027G03F1/54
CPCH01L21/67051G03F7/422G03F7/42H01L21/02H01L21/302
Inventor 林田充司渡部正夫真田俊之城田农
Owner AQUA SCI CORP
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