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Ferromagnetic semiconductor crystal and preparation method thereof

A semiconductor and ferromagnetic technology, applied in the field of ferromagnetic semiconductor crystals and its preparation, can solve the problems of difficult research and influence of physical mechanism

Inactive Publication Date: 2011-11-23
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the properties of (Ga,Mn)As are greatly affected by the fabrication process, and because the doping of Mn element simultaneously introduces carriers and magnetic moments, its physical mechanism is difficult to be studied.

Method used

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  • Ferromagnetic semiconductor crystal and preparation method thereof
  • Ferromagnetic semiconductor crystal and preparation method thereof
  • Ferromagnetic semiconductor crystal and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] In a glove box filled with argon gas, the Zn powder, Mn powder, and As powder with a purity of 99.9% or above were uniformly mixed at a molar ratio of 0.9:0.1:1, and pressed into a small disc of the mixture. Then weigh the Li block according to the molar ratio of Li:Zn:Mn:As = 1.1:0.9:0.1:1, and put the small disc of the mixture into the alumina ceramic test tube together with the Li block; The test tube is packaged in a quartz tube, and the inside of the quartz tube is evacuated, and then 0.2 Bar of argon gas is filled in the quartz tube and sealed. Next, it is sintered at a temperature of 900° C. in a high-temperature furnace for 5 hours.

[0027] Finally, the sample was taken out, and the measurement experiments of X-ray diffraction and DC magnetic susceptibility were carried out on the sample respectively, and the results were as follows: figure 1 and figure 2 shown. Its ferromagnetic transition temperature is 50K.

[0028]

Embodiment 2

[0030] Using the solid-state reaction method under normal pressure, Zn powder and As powder with a purity of 99.9% or above are mixed at a molar ratio of 1:1, pressed into tablets, and packaged in a vacuum quartz tube, sintered at 900°C, and kept warm After 48 hours, a single-phase ZnAs compound can be prepared. Single-phase MnAs compounds were also obtained in the same manner.

[0031] In a glove box filled with argon gas, Li blocks were then weighed according to the molar ratio of Li:ZnAs:MnAs=1.5:0.8:0.2, and put together into alumina ceramic test tubes; then the ceramic test tubes containing samples were put into quartz The inside of the tube was evacuated, and then the quartz tube was filled with 0.5 Bar argon gas and sealed. Next, it is sintered in a high-temperature furnace at a temperature of 1000° C. for 30 hours.

[0032] Finally got Li y (Zn 1-x mn x ) As crystal. The experiment carried out structural refinement on the X-spectrum of the sample, and obtained it...

Embodiment 3

[0035] According to the steps of Example 2, ZnAs and MnAs precursors were prepared.

[0036] In a glove box filled with argon gas, Li blocks were then weighed according to the molar ratio of Li:ZnAs:MnAs=0.5:0.7:0.3, and put into alumina ceramic test tubes together; The inside of the tube was evacuated, and then the quartz tube was filled with 0.2 Bar argon gas and sealed. Next, it is sintered at 600° C. for 10 hours in a high-temperature furnace. Finally also get Li y (Zn 1-x mn x ) As crystal.

[0037]

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Abstract

The invention discloses a ferromagnetic semiconductor crystal and a preparation method thereof. The material of the semiconductor crystal is LiY(Zn1-xMnx)As, wherein y is more than 0.5 and less than 1.5, x is more than 0 and less than 0.5, and x and y represent the percentages of atoms. The invention further provides a high-pressure synthesizing method of the LiY(Zn1-xMnx)As crystal, which is a method for preparing LiY(Zn1-xMnx)As in the pressure scope of 0-20 GPa at a temperature of 600-1000 DEG C. The LiY(Zn1-xMnx)As semiconductor crystal prepared by the method disclosed by the invention has a ferromagnetic transition temperature of below 50K in specific components, belongs to a cubic system, has a space group of F-43 m, and has an important physical significance to research on the magnetic mechanisms of the ferromagnetic semiconductors.

Description

[0001] technical field [0002] The invention relates to a ferromagnetic semiconductor crystal and a preparation method thereof. [0003] Background technique [0004] Ferromagnetic semiconductors are realized by doping magnetic ions into the semiconductor. Due to the application prospects of spintronic devices, ferromagnetic semiconductor systems have been extensively studied as early as the 1990s (Zutic, I. et al., Rev. Mod. Phys. 76, 323, 2004). So far the most promising ferromagnetic semiconductors are III-V semiconductors, that is, semiconductors with group III element V element compounds as the parent phase, and the ferromagnetic transition temperature of the (Ga,Mn)As system can reach above 110K (Ohno, H ., Science 281,951,956,1998). However, the properties of (Ga,Mn)As are greatly affected by the manufacturing process, and because the doping of Mn element introduces both carriers and magnetic moments, its physical mechanism is difficult to study. [0005] C...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/10C30B1/10H01F1/40
Inventor 靳常青邓正植村泰朋
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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