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dry etching method

A technology of dry etching and main etching, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of low etching accuracy, improve etching accuracy, and reduce undesired etching Effect

Active Publication Date: 2017-03-15
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a dry etching method to solve the problem of low etching precision in the existing dry etching process

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Embodiment Construction

[0026] The dry etching method provided by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0027] The core idea of ​​the present invention is to provide a dry etching method. After the first main etching step is completed, the first additional etching step is continued, and the first inert gas is used in the first additional etching step. The inert gas is difficult to ionize into plasma, so that no etching will occur substantially in the first additional etching step; in addition, since the first additional etching radio frequency power is used in the first additional et...

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Abstract

The invention provides a dry etching method, wherein after a first main etching step is completed, a first additional etching step is carried out continuously; first inert gas is used in the first additional etching step; the inert gas is difficultly ionized into plasmas, therefore, the etching hardly occurs in the first additional etching step; furthermore, because first additional etching radio-frequency power is used in the first additional etching step, after the first main etching step is completed, the used first main etching radio-frequency power is unnecessarily attenuated to 0, that is to say, the unexpected etching process resulted from the attenuation of the first main etching radio-frequency power can be reduced; and finally, the unexpected etching process is reduced, and the etching precision is improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing technology, in particular to a dry etching method. Background technique [0002] Circuit integration has grown tremendously since the advent of the integrated circuit. Because all components are integrated on a silicon chip, integrated circuits already have the characteristics of interconnecting many components, low cost, and high reliability. Integrated circuit manufacturing makes electronic devices on silicon wafers, and then deposits interconnect materials such as dielectric layers and conductive layers to connect the devices, so that many functional microchips can be fabricated on silicon wafers. Typically, interconnect material is deposited on the surface of the silicon wafer and then selectively removed to form the desired microchip. This process of selectively removing material is called etching. Etching is divided into dry etching and wet etching. Among them, dry etching...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L21/768
Inventor 汪新学王伟军
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT