IGBT (Insulated Gate Bipolar Translator) power half-bridge module

Abstract

The invention relates to an IGBT (Insulated Gate Bipolar Translator) power half-bridge module. A semiconductor chip is connected with a metal clad ceramic substrate. One side of a main electrode is connected with the metal clad ceramic substrate. The other side of the main electrode passes through a shell. The metal clad ceramic substrate is connected with a copper bottom plate. The copper bottomplate is fixed on the shell. The metal clad ceramic substrate, the semiconductor chip and the main electrode are sealed in the shell through insulation paste in an insulated way. The main electrode is composed of a bending part and a lead-out part. The bending part is arranged in the shell. The section of the bending part is groove-shaped. The side wall of a groove-shaped outer groove of the mainelectrode is fixed on the metal clad ceramic substrate. The side wall of an inner groove is close to the inner wall of the shell. The groove-shaped bottom surface of a first input electrode is opposite to the groove-shaped bottom surface of a second input electrode. A separation plate downwardly extending from the top of the shell is arranged between the groove-shaped bottom surfaces of the firstinput electrode and the second input electrode. The lower part of the separation plate is arranged in the insulation paste and sealed. The IGBT power half-bridge module disclosed by the invention is rationally structured. The IGBT power half-bridge module not only can be used for increasing the facing area between the two input electrodes and reducing inductance of a main loop but also can be used for ensuring the insulation property.

Description

technical field [0001] The invention relates to an IGBT power half-bridge module, which belongs to the technical field of semiconductor power modules. Background technique [0002] The IGBT power half-bridge module is mainly composed of a semiconductor chip (IGBT chip), a metal-ceramic substrate (DBC), a copper base plate, a housing, and a main electrode. One end of the main electrode is fixed on the metal-ceramic substrate, and the other end passes through the housing. After bending, install the upper part of the housing by fasteners. In order to avoid heat concentration of the power module and reduce the inductance of the main loop, the loop area between the positive and negative input electrodes of the main electrode is usually reduced. See figure 1 As shown, the electrode of a current power module is in the shape of a groove, and the two groove sides of the groove shape of the main electrode are welded on the metal-clad ceramic substrate. In order to reduce the inducta...

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Problems solved by technology

See figure 1 As shown, the electrode of a current power module is in the shape of a groove, and the two groove sides of the groove shape of the main electrode are welded on the metal-clad ceramic substrate. In order to reduce the inductance of the main circuit, the distance between the two input electrodes of the main electrode Shrinking, the main electrode adopts a large bend to avoid the problem of excessive stress at the welding point when the electrode is bent, but also because the two input electrodes are only facing the groove-shaped cross-section, resulting in a small facing area of ​​the two input electrodes, so that The inductance of the main loop of the power module has not achieved the optimization effect

See figure 2 As shown, it is a power module with another structure at present. The main electrode is welded on the cermet-clad substrate. Since the main electrode is in a stepped shape, although the main electrodes are arranged side by side, the direct facing area of ​​the two input electrodes can be increased, but it cannot Minimizing the distance between the two input electrodes, in fact, cannot achieve the purpose of greatly reducing the inductance of the main circuit

In addition, when the positive and negative electrodes of the main electrodes of the power module are very close to each other, it is difficult to ensure the insulation performance under high voltage conditions.

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