7results about How to "Increase the facing area" patented technology

The application provides a MEMS capacitive pressure sensor and a preparation and use method thereof, and relates to the technical field of sensors.The structure of the MEMS capacitive pressure sensor provided by the application mainly comprises a force-sensitive nanofilm, a temperature-sensitive nanofilm, a substrate and a base plate, the substrate and the base plate are separated into two independent sealed cavities, and the surface of the base plate opposite to the force-sensitive nanofilm is etched with a ladder-shaped structure.The application optimizes the capacitive-pressure response characteristics (when the external pressure acts, the force-sensitive nanofilm is deformed, and the linear coupling is generated by the change of the effective overlapping area and the interval between the force-sensitive nanofilm and the ladder-shaped structure), and combines with the in-situ temperature compensation of graphene, so that the MEMS capacitive pressure sensor provided by the application can realize high linearity of pressure measurement in a wide temperature range, and the technical problems of traditional devices, such as serious temperature crosstalk and narrow linear interval, are solved, thereby providing a new solution for high-precision and high-reliability pressure measurement.

This invention discloses a three-dimensional conductive electrode integrated capacitor, relating to the field of capacitor technology. The capacitor's first electrode includes multiple parallel-arranged first horizontal electrode plates and a first vertical electrode plate, with one end of the first vertical electrode plate perpendicularly connected to one end of the multiple first horizontal electrode plates. The second electrode includes multiple parallel-arranged second horizontal electrode plates and a second vertical electrode plate, with one end of the second vertical electrode plate perpendicularly connected to one end of the multiple second horizontal electrode plates. The surfaces of the first and second vertical electrode plates are positioned opposite each other, and the multiple first and second horizontal electrode plates are arranged in a staggered, interleaved manner. An electrical isolation distance exists between the other end of each first horizontal electrode plate and the surface of the second vertical electrode plate, and an electrical isolation distance also exists between the other end of each second horizontal electrode plate and the surface of the first vertical electrode plate. This invention can increase energy storage density within a limited space while ensuring electrical safety.

The invention discloses a semiconductor structure and a forming method thereof. The first electrode layer is located on the substrate, and an electrode convex part is formed on the first electrode layer; the first dielectric layer covers the top and the side wall of the electrode convex part and the first electrode layer on the side part of the electrode convex part; the second electrode layer covers the first dielectric layer, and a first opening for exposing the first dielectric layer at the top of the electrode convex part is formed in the second electrode layer; the second dielectric layer covers the second electrode layer and the first dielectric layer exposed out of the first opening; the third electrode layer covers the second dielectric layer, a second opening exposing the top of the second dielectric layer is formed in the third electrode layer, and projections of the second opening and the first opening on the substrate are located at different positions; a first through hole interconnection structure at the first opening, wherein the first electrode layer and the third electrode layer are electrically connected through the first through hole interconnection structure; and a second through hole interconnection structure at the second opening, wherein the second electrode layer is electrically connected with the second through hole interconnection structure.

This invention provides a multilayer ceramic capacitor structure for use in the field of ceramic capacitor technology. The structure includes a sintered assembly and end electrodes at both ends. The sintered assembly is composed of alternating ceramic dielectric layers and blank dielectric layers. Both types of dielectric layers and the sandwiched sheet electrodes adopt a sinusoidal wave cross-section structure, with adjacent layers arranged in a concave-convex interlocking pattern. The two ends of the sheet electrodes have a rounded transition structure, and the positive and negative electrodes extend out in a staggered manner. U-shaped semi-grooves are provided on both sides of the dielectric layer in the width direction. The interlayer semi-grooves are spliced ​​to form a through-hole U-shaped channel, which is filled with insulating, highly thermally conductive U-shaped heat-dissipating resin. Heat dissipation openings communicating with the through-hole are provided at both ends of the sintered assembly. A fully insulated heat dissipation unit composed of a heat dissipation layer, heat-conducting pillars, and U-shaped heat-dissipating resin is assembled thereon. All heat dissipation components are isolated from the sheet electrodes by a ceramic solid. This invention improves the overall performance of the device by optimizing the overall stacking, heat dissipation, and end electrode structure, making it suitable for high-power applications.

The ceramic dielectric chip, capacitor and preparation method with an external chamfered disc-shaped structure provided by the present invention include a ceramic dielectric body and a pair of electrodes arranged on the front and back sides of the ceramic dielectric body. The main body of the ceramic dielectric body is cylindrical; the front and back sides of the ceramic dielectric body form symmetrical grooves corresponding to the coverage area of ​​the pair of electrodes, and the electrode is an electrode coating formed on the bottom surface of the groove by a sputtering process; the top surface of the groove is higher than the outer edge of the ceramic dielectric body, so that the outer edge of the ceramic dielectric body forms a chamfered structure. Compared with the prior art, the electrode is an electrode coating formed on the bottom surface of the groove by a sputtering process, and the peripheral height prevents edge breakdown. The sputtering mask can make the electrodes at both ends of the chip face each other, achieving the maximum electrode facing area, thereby obtaining the maximum capacitance. The facing of the electrodes also makes the electric field reach the most uniform state, which can effectively solve the problems of poor product withstand voltage caused by electrode asymmetry.

A high-precision absolute type rotation angle sensor is composed of a static pole plate, a movable pole plate and a signal demodulation circuit. Wherein the movable pole plate and the static pole plate are coaxially matched, and the movable pole plate can complete rotating motion relative to the static pole plate. In order to meet the requirement of high-precision absolute measurement of the rotation angle, the sensor is respectively provided with two groups of fan-shaped electrodes and special-shaped reflection polar plates which are used for accurate measurement and rough measurement and are periodically arranged on a static polar plate and a movable polar plate, and the fan-shaped electrodes and the special-shaped reflection polar plates jointly complete high-precision absolute measurement of the rotation angle in a capacitive coupling mode. The sensor has the advantages of simple structure, high precision, absolute measurement, good environmental adaptability and the like.