Array substrate, manufacturing method therefor, and liquid crystal display panel
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A technology of array substrate and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of GOA circuit design difficulties, large area occupied by capacitors, and increased size, so as to reduce the occupation space, achieve narrow frame design, and increase the effect of facing the area
Inactive Publication Date: 2017-01-04
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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However, the Boost capacitor usually needs to reach the picofarad (pF) level to make the GOA circuit work effectively. For example, the capacitance area of a 10pF Boost capacitor usually needs to reach 0.1mm 2 , for a higher resolution LCD (Liquid Crystal Display, liquid crystal display) panel, the size of the TFT and Boost capacitor needs to be further increased
In other words, the area occupied by TFT and Boost capacitors is relatively large, which brings great difficulties to the design of narrow-frame, high-resolution GOA circuits
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[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0028] In addition, the following descriptions of the various embodiments refer to the attached drawings to illustrate specific embodiments in which the present invention can be implemented. The directional terms mentioned in the present invention, for example, "upper", "lower", "front", "rear", "left", "right", "inner", "outer", "side", etc., only is to refer to the direction of the attached drawings. Therefore, the direction terms used are for ...
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Abstract
The invention provides an array substrate, and the array substrate comprises a glass substrate, a photoresist layer, a first metal layer, a dielectric layer, a buffering layer and a second metal layer, wherein the glass substrate, the photoresist layer, the first metal layer, the dielectric layer, the buffering layer and the second metal layer are sequentially stacked. A side, close to the first metal layer, of the photoresist layer is provided with a plurality of bulged structures, and the first metal layer covers the bulged structures. The first metal layer, the dielectric layer, the buffering layer and the second metal layer has the same shape as the bulged structures. According to the invention, the photoresist layer is provided with the bulged structures, thereby enabling the firs metal layer, the dielectric layer, the buffering layer and the second metal layer on the bulged structures to be corrugated, increasing the opposite area of the first and second metal layers, increasing the equivalent capacitance, facilitating the reduction of a space occupied by an equivalent capacitor, and achieving a narrow frame design. A manufacturing method for the array substrate can reduce the space occupied by the equivalent capacitor, and achieves the narrow frame design.
Description
technical field [0001] The invention relates to the technical field of displays, in particular to an array substrate, a manufacturing method thereof, and a liquid crystal display panel. Background technique [0002] In the prior art, usually in the array process stage of the liquid crystal display panel, the gate driver circuit is manufactured on the array substrate by using GOA (Gate Driver OnArray) technology, so as to realize the progressive scan driving of the gate lines. Compared with traditional COF (Chip On Flex / Film, chip-on-film) technology and COG (Chip OnGlass, chip directly bonded to glass) technology, GOA technology can reduce manufacturing costs. The main feature of GOA technology is that it relies on continuous triggering of GOA units. Realize the shift register function, save the bonding area of the gate integrated circuit (Gate IC) and the Fan-out wiring space, and realize the design of the narrow frame. [0003] In GOA circuit design, TFT (Thin Film Tran...
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