Unlock instant, AI-driven research and patent intelligence for your innovation.

Mask plate for semiconductor technique

A mask and semiconductor technology, applied in photomechanical processing of originals, patterned surface photoengraving process, optics, etc., can solve the problems of long time, high cost, increase production cost, etc., and achieve the effect of improving the yield rate

Active Publication Date: 2013-04-10
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is very expensive to use this special mask inspection system to detect mask contamination, and it takes a long time. Each mask needs 2 to 4 hours, which not only affects the production efficiency of semiconductor devices, but also increases the production efficiency. cost, which is unaffordable for SMEs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mask plate for semiconductor technique
  • Mask plate for semiconductor technique
  • Mask plate for semiconductor technique

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041]In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0042] In order to thoroughly understand the present invention, detailed steps will be provided in the following description to illustrate how the present invention manufactures a mask with a contamination detection pattern region and how to use the contamination detection pattern to detect mask contamination. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other emb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a mask plate for semiconductor technique. The mask plate comprises at least one mask plate cutting channel. The mask plate cutting channel comprises at least one pollution detection pattern region, and the random edge of the pollution detection pattern regions is not beyond the boundary of the mask plate cutting channel. The pollution detection pattern region is used for detecting the pollution on the mask plate. The pollution detection pattern region includes a plurality of lines; two ends of each line are intersected with the boundary of the pollution detection pattern region. Not only the pollution on the mask plate can be effectively detected on line, so that the pollution can be timely removed, the yield of the semiconductor device can be improved, but also thecost and the time for detecting the pollution can be reduced by utilizing the mask plate with the pollution detection pattern region of the invention.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a mask used in the semiconductor process. Background technique [0002] In the production process of integrated circuits, photolithography has long been an indispensable technology. The photolithography process is mainly to first form the designed pattern, such as circuit pattern, contact hole pattern, etc. on one or more mask plates, and then transfer the pattern on the mask plate to the on the photoresist layer on the wafer. [0003] In actual industrial production, contamination of masks has always been a problem. Contamination may result from reticle handling / storage, reticle fabrication, reticle blow-off, film frame residue, or other semiconductor manufacturing processes. One of them is smog pollution, such as figure 1 shown in the 101 area. Haze contamination is a deposit deposited on the surface of the mask layer, which is produced by chemical residues or impur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/44
Inventor 胡华勇
Owner SEMICON MFG INT (SHANGHAI) CORP