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Optimization method of photoresist and photoresist pattern

An optimization method, photoresist technology, applied in the direction of photosensitive materials used in optomechanical equipment, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of semiconductor device defects, unclean removal, etc., and achieve the goal of improving yield Effect

Inactive Publication Date: 2011-11-30
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0009] The problem solved by the present invention is to provide a method for optimizing photoresist and photoresist patterns, avoiding the removal of gels that are difficult to remove due to the metal ions in the photoresist and the polymers in the photoresist during the developing process. Dirty, causing defects in semiconductor devices

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  • Optimization method of photoresist and photoresist pattern
  • Optimization method of photoresist and photoresist pattern
  • Optimization method of photoresist and photoresist pattern

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Embodiment Construction

[0026] In the existing photolithography process, some impurities (such as metal ions) will inevitably be doped in the photoresist. With the miniaturization of the semiconductor manufacturing process, the metal ions will be mixed with the photoresist during the photolithography process. The polymer is easy to form a gel that is difficult to remove, which affects the effect of the photolithography process and reduces the yield of semiconductor products.

[0027] The invention improves the photoresist through experiments, and provides a new type of photoresist, which includes a chelating agent for coordination and bonding with metal ions to form a chelate. Preferably, the chelating agent is an ethylenediaminetetraacetic acid solvent, and the ethylenediaminetetraacetic acid solvent forms an ethylenediaminetetraacetic acid chelate in a ring structure with the metal ion.

[0028] In another aspect of the present invention, the photoresist containing the chelating agent is applied in...

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Abstract

A photoresist and photoresist pattern optimization method, the photoresist includes a chelating agent used for coordination and bonding with metal ions to form a chelate. The optimization method includes: providing a semiconductor substrate; coating a photoresist layer on the surface of the semiconductor substrate, and the photoresist layer contains discrete metal ions; transferring the pattern on the mask plate by exposure and development On the photoresist layer, a photoresist pattern is formed; the photoresist includes a chelating agent for coordination and bonding with metal ions to form a chelate. Compared with the prior art, the photoresist layer of the present invention includes a chelating agent, so that the chelating agent coordinates with the metal ion to form a chelate, which can effectively prevent the metal ion from interacting with the photoresist. The polymer in it forms a gel that is not easy to remove and prevents defects caused by unclean removal during development, thereby improving the yield of semiconductor devices.

Description

technical field [0001] The invention relates to the manufacturing field of semiconductor devices, in particular to a photoresist and a photoresist pattern optimization method capable of preventing metal ion impurities from affecting the quality of the photoresist pattern. Background technique [0002] The semiconductor photolithography technology includes coating a photoresist on the top surface of a semiconductor wafer, taking a positive photoresist as an example, exposing the photoresist to form a pattern, and then baking the exposed photoresist at a high temperature to Crack the polymer-based substance in the exposed part; then move the cracked polymer photoresist to the developing tank, because the exposed polymer is soluble in the developer, so the exposed polymer can be removed; so , a patterned photoresist layer can be obtained on the top surface of the wafer. [0003] The current mainstream of photolithography technology is the exposure technology using 248nm (expos...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004H01L21/027
Inventor 林益世黄宜斌
Owner SEMICON MFG INT (SHANGHAI) CORP
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