Abnormal protection circuit for intelligent power module

Abstract

The invention discloses an abnormal protection circuit for an intelligent power module. The abnormal protection circuit comprises a first P-channel metal oxide semiconductor (PMOS) transistor 301, a first N-channel metal oxide semiconductor (NMOS) transistor 302, a lower bridge arm power supply 303, a first insulated gate bipolar transistor (IGBT) 304, a second PMOS transistor 305, a second NMOS transistor 306, an upper bridge arm power supply 307 and a second IGBT 308. A lower bridge arm driving signal LIN is connected with a gate of the first PMOS transistor 301, the gate of the first NMOS transistor 302 and an input end of the first abnormal protection circuit 309. A drain of the first PMOS transistor 301 is connected with the drain of the first NMOS transistor 302, and is also connected with the gate of the first IGBT 304 and the first and second output ends of the first abnormal protection circuit 309, and the point of the later connection is marked as LO. The abnormal protection circuit can timely discover the abnormality an IGBT gate connecting line and timely switch the IGBT off, and has the characteristics of simple and rational structure, operational flexibility, high degree of safety and wide application range.

Description

technical field [0001] The invention relates to an integrated circuit abnormality protection technology and an IGBT driving technology, in particular to an abnormality protection circuit for an intelligent power module. Background technique [0002] Intelligent Power Module, or IPM (Intelligent Power Module), is a power drive product that combines power electronics and integrated circuit technology. The intelligent power module integrates the power switching device and the high-voltage driving circuit, and has built-in fault detection circuits such as overvoltage, overcurrent and overheating. On the one hand, the intelligent power module receives the control signal from the MCU to drive the subsequent circuit to work, and on the other hand, it sends the system status detection signal back to the MCU. Compared with traditional discrete solutions, intelligent power modules have won an increasing market due to their advantages of high integration and high reliability. They are...

AI Technical Summary

Problems solved by technology

Due to the manufacturing process, there is a probability of about 500ppm that the connection at the connection will loosen during the process of solid sealing and high and low temperature impact, so that the gate of the IGBT is suspended. When the collector is connected to high voltage, the gate The extremely suspended IGBT will be turned on. If another IGBT is turned on due to the input signal, it will cause the IGBTs of the upper and lower bridge arms to be turned on at the same time, thereby forming a huge current. The heat accumulation will cause the IPM to explode, and then cause The circuit board of the whole machine is burnt out

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