Driving circuit with buffer structure and integrated circuit

Abstract

The invention provides a driving circuit with a buffer structure and an integrated circuit; the driving circuit comprises the buffer structure, a first transistor, a second transistor, a third transistor, a first inverter and a second inverter, the output end of the first inverter is connected to the first transistor after passing through the second inverter, and the output end of the second inverter is connected to the third transistor. The output end of the first phase inverter is connected to the second transistor, and the output end of the first phase inverter is connected to the third transistor through the buffer structure. Thus, the third transistor and the buffer structure are added on the basis of the original circuit, and the buffer structure is used for providing time delay so as to relieve the time delay between the first transistor and the second transistor in the original circuit, so that the problem that the first transistor and the second transistor are conducted at thesame time when the level of an input signal is changed is avoided.

Description

technical field [0001] The present application relates to the technical field of drive circuits, in particular, to a drive circuit with a buffer structure and an integrated circuit. Background technique [0002] With the continuous maturity of gallium nitride technology, gallium nitride-based high electron mobility transistors have been commercialized, and gallium nitride devices have the characteristics of high power, high frequency, high efficiency, and high withstand voltage. Although gallium nitride devices have many excellent performances, there are still defects in gallium nitride power devices, such as high conversion rate of drain voltage and high drain current conversion rate of gallium nitride power devices, which make the circuit more sensitive to parasitic inductance. , the threshold voltage of gallium nitride power devices is low, and the requirements for gate drive circuits are relatively high. [0003] In order to solve the above-mentioned defects of the GaN ...

AI Technical Summary

Problems solved by technology

Although gallium nitride devices have many excellent performances, there are still defects in gallium nitride power devices, such as high conversion rate of drain voltage and high drain current conversion rate of gallium nitride power devices, which make the circuit more sensitive to parasitic inductance. , the threshold voltage of gallium nitride power devices is low, and the requirements for gate drive circuits are high

However, since GaN power devices do not have the P-MOS function similar to the traditional Si process, in the gate drive circuit, due to the circuit connection structure of the pull-up transistor and the pull-down transistor, the gate signal of the pull-up transistor is different from the gate signal of the pull-down transistor. There is a delay between signals

When the signal level is converted, due to the delay, the upper and lower tubes may be turned on at the same time, resulting in a short circuit of the power supply, increasing power consumption, and possibly damaging the device in severe cases.

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