Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Optimization method of non-ideal lithography system opc based on abbe vector imaging model

A technology of lithography system and optimization method, which is applied in the direction of photomechanical processing of originals, optics, and patterned surfaces for opto-mechanical processing, etc. And other issues

Inactive Publication Date: 2011-12-07
BEIJING INSTITUTE OF TECHNOLOGYGY
View PDF5 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above method has the following two shortcomings: First, the above method is based on the scalar imaging model of the lithography system, so it is not suitable for high NA lithography systems
Second, the above method does not consider the impact of scalar aberration and polarization aberration of the lithography system, so it is not suitable for non-ideal lithography systems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optimization method of non-ideal lithography system opc based on abbe vector imaging model
  • Optimization method of non-ideal lithography system opc based on abbe vector imaging model
  • Optimization method of non-ideal lithography system opc based on abbe vector imaging model

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0173] Such as Figure 5 As shown, the simulation uses the aberration obtained by ray tracing at a certain off-axis field of view point of the projection system designed in the laboratory (because in the field of numerical calculation, a two-dimensional figure is essentially a matrix. Here it is actually Draw the two-dimensional wave surface diagram corresponding to the scalar aberration matrix, and the value of each coordinate point on the diagram corresponds to the element value of the matrix one by one). 501 is a schematic diagram of the scalar aberration of the field of view point, and 502-509 are the eight Jones pupil components of the polarization aberration of the field of view point. 502 and 503 are respectively J xx The real and imaginary parts of . 504 and 505 are J respectively xy The real and imaginary parts of . 506 and 507 are J respectively yx The real and imaginary parts of . 508 and 509 are J respectively yy The real and imaginary parts of .

[0174] S...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for optimizing optical proximity correction (OPC) of a nonideal photoetching system based on an Abbe vector imaging model. The method comprises the following steps of: setting transmittivity of an opening part and a light blocking part in a mask; setting a variable matrix Omega; setting a target function D as linear combination of an imaging evaluation function of an ideal image surface and an imaging evaluation function of an image surface of which the defocusing quantity is fnm; and guiding optimization on a mask pattern by using the variable matrix Omega andthe target function D. By using the vector imaging model and taking vector characteristic of an electromagnetic field into consideration during acquisition of a space image, the optimized mask is suitable for the photoetching system with small numerical aperture (NA) and also suitable for the photoetching system of which the NA is more than 0.6. By the method, the gradient information of optimizing the target function is utilized and a steepest descent method is combined to optimize the pattern and the phase of an attenuated phase-shifting mask, so the optimization efficiency is high.

Description

technical field [0001] The invention relates to an optimization method of a non-ideal photolithography system OPC (photolithography proximity correction) based on an Abbe (Abbe) vector imaging model, and belongs to the technical field of photolithography resolution enhancement. Background technique [0002] The current large-scale integrated circuits are generally manufactured using photolithography systems. The lithography system is mainly divided into four parts: illumination system (including light source and condenser), mask, projection system and wafer. The light emitted by the light source is focused by the condenser and then enters the mask, and the opening part of the mask transmits light; after passing through the mask, the light is incident on the wafer coated with photoresist through the projection system, so that the pattern of the mask is copied on the wafer. [0003] The current mainstream lithography system is the 193nm ArF deep ultraviolet lithography system...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F1/14
Inventor 马旭李艳秋董立松
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com