A dummy metal filling structure and planar inductor with dummy metal filling
A metal filling structure and planar inductor technology, which is applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problems of integrated circuit performance impact, planar inductor quality factor impact, etc., and achieve the effect of reducing impact and uniform density distribution
Inactive Publication Date: 2011-12-07
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0013] The purpose of the present invention is to provide a dummy metal filling structure to solve the problem that randomly arranged dummy metal layers have a great impact on the performance of integrated circuits
[0014] Another object of the present invention is to provide a planar inductor with dummy metal fillings to solve the problem that randomly arranged dummy metal layers have a great influence on the quality factor of planar inductors
Method used
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[0034] The dummy metal filling and the planar inductor with dummy metal filling proposed by the present invention will be further described in detail below with reference to the drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.
[0035] The core idea of the present invention is to provide a dummy metal filling structure, the dummy metal filling structure includes multiple dummy metal layers, and wherein each dummy metal layer includes a plurality of dummy metals, and each dummy metal layer The dummy metal in the layer is cross-arranged with the dummy metal in the adjacent dummy metal layer, so that the density distribution of the dummy metal is more uniform, and...
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Abstract
The invention discloses a dummy metal filling structure, the dummy metal filling structure includes multiple dummy metal layers, and wherein each dummy metal layer includes a plurality of dummy metals, and the dummy metal in each dummy metal layer is connected with phase The dummy metals in the adjacent dummy metal layer are arranged crosswise, so that the distribution of the dummy metals is more uniform, and the influence of the dummy metals on the performance of the integrated circuit is reduced. At the same time, the invention also discloses a planar inductor with dummy metal fillings. The planar inductor with dummy metal fillings includes an inductance body, an inductance winding connected to the inductance body, and an inductor located on the inductance body. And the virtual metal filling under the inductor winding, the virtual metal filling has the above-mentioned virtual metal filling structure, so that the metal density under the inductance area of the planar inductor is more uniform, and the quality factor of the virtual metal to the planar inductor is reduced Impact.
Description
technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing process, in particular to a dummy metal filling structure and a planar inductor with dummy metal fillings. Background technique [0002] With the rapid development of wireless mobile communication technology, Radio Frequency Integrated Circuit (RFIC, Radio Frequency Integrated Circuit) is becoming more and more important. Radio Frequency Integrated Circuit is an integrated circuit that works in the frequency range of 300MHz to 300GHz. [0003] As we all know, the essence of an integrated circuit (IC, Integrated Circuit) is to integrate electronic components such as transistors, diodes, resistors, capacitors and inductors required by the circuit onto a semiconductor chip to form a complete logic circuit to achieve control, calculation or memory. and other functions. Generally speaking, an integrated circuit includes multiple layers of electronic components, and the layers are con...
Claims
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Login to View More IPC IPC(8): H01L23/528H01L27/00
Inventor 程仁豪
Owner SEMICON MFG INT (SHANGHAI) CORP